Applied Physics Letters
Articles in this Issue
Thermal behavior analysis of Raman lasing in 4H-SiC microresonators
Raman lasing in microresonators has been observed in various material platforms, such as silicon, silica, lithium niobate, diamond, and silicon carbide. Frequency matching between cavity resonances an...
Asymmetric polarization modulation of self-powered deep-ultraviolet photodetector based on an epitaxial <b> <i>β</i> </b> -Ga2O3/PZT heterojunction
Self-powered deep-ultraviolet photodetectors (DUV PDs) based on heterojunctions attract broad interest for their low-power operation and high portability. However, their performance remains limited by...
Enhanced piezoelectricity and pyroelectricity in poly(vinylidene fluoride-co-tetrafluoroethylene) via hot pressing
Ferroelectric polymers have been intensively explored for flexible and wearable applications. Most studies concentrate on poly(vinylidene fluoride) and its copolymer poly(vinylidene fluoride-co-triflu...
High-sensitivity pressure sensing via frequency modulation in layer-transferred AlN membrane resonators
This work reports on a novel fabrication approach for the realization of high-sensitivity frequency modulated (FM) pressure sensors based on aluminum nitride drumhead resonators with fully integrated...
Thermal transport in <b> <i>γ</i> </b> -InSe: Bulk single crystals and thin flakes
We measure the temperature-dependent in-plane thermal conductivity, κ∥(T), of high-purity γ-InSe bulk single crystals and exfoliated thin flakes (30–50 nm) from 50 to 300 K. Our bulk results agree wit...
Spin-transfer torque efficiency in ferro- and antiferromagnetically coupled synthetic free layers studied with superparamagnetic magnetic tunnel junctions
Magnetic tunnel junctions (MTJs) controlled by spin-transfer torque (STT) are key elements in nonvolatile memories and have recently been explored as stochastic devices in unconventional computing. Th...
Interfacially arrested melting in thin films: Capillarity-driven suspension of phase transitions
Melting is typically viewed as a bulk first-order phase transition that proceeds once nucleation barriers are overcome. Here, we demonstrate an interfacially arrested melting regime in molecularly thi...
Preliminary demonstration of diamond-GaN <i>p–n</i> diodes via grafting
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high-power and high-frequency electronics. However, efficient doping in UWB...
Nearly isotropic upper critical field and large critical current density in Mo8Ga41
Intermetallic superconductors feature mechanical properties such as ductility and strength suitable for wire fabrication. Here, we show that Mo8Ga41 crystals host superconducting critical temperature...
Low-temperature (600 °C) formation of Al2O3/ <b> <i>β</i> </b> -Ga2O3 interface with low interface state density employing substrate-surface O3 treatment processes
The benefit of employing O3 surface treatment of the β-Ga2O3 substrate to fabricate metal–oxide–semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) Al2O3 as dielectrics was investigated s...
Lead-free perovskite photo-responsive light-emitting diodes for monolithic heart pulse sensors
The development of miniaturized and mechanically flexible wearable optical health monitoring requires compact, biocompatible optoelectronic devices. Thin film devices based on perovskites, capable of...
Squeeze-film flow of shear-thinning fluids
Squeeze flows are common in a variety of applications, including engineering, biology, and rheometry. While the squeeze flow of Newtonian fluids has been extensively studied, the squeeze-flow dynamics...
Large spin Hall effect in 300 °C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates
The application of topological insulator bismuth antimony (BiSb) to spin–orbit torque (SOT)–magnetic random-access memory (MRAM) applications using complementary metal–oxide–semiconductor process dema...
Quantitative evaluation of sidewall impact in micro-LEDs by ultrafast-gated hyperspectral imaging microscopy
Sidewall damage is widely recognized as a critical factor limiting the efficiency and reliability of micro-light-emitting diodes (micro-LEDs). However, its spatial impact region and transient manifest...
Improving the photoelectric performance of GaN-based micro-LEDs using crystal plane engineering
The sidewall damage, introduced by dry etching, is one of the key problems that seriously hinder the industrialization of high-efficiency micro-light-emitting diodes (LEDs). Unfortunately, current res...
The origin of dynamic on-resistance instability in GaN hybrid drain-gate injection transistors under hard-switching conditions
In this work, we investigate the origin of the dynamic on-resistance (RDSON) instability in GaN hybrid drain-embedded gate injection transistors under hard-switching conditions. Double-pulse tests rev...
Achieving high photoelectric efficiency in an optimized vertical photoconductive device with 355 nm excitation
This work demonstrates a high-efficiency, intrinsically triggered vertical photoconductive semiconductor switch using 355 nm laser excitation. The key is a zero-electrode-offset design where the elect...
Spurious-free A1-mode Lamb wave resonator with crescent-shaped busbars and high FoM of 360
In this letter, we demonstrate an effective route to suppress transverse spurious modes in A1-mode LiNbO3 Lamb wave resonators by shaping the busbars into a crescent profile. The resulting crescent-sh...
Program-state-dependent recovery effect in 3D NAND flash following total ionizing dose irradiation
The growing demand for aerospace data storage necessitates understanding the radiation response mechanisms of 3D NAND technology to design reliable systems. In this study, we observe that irradiation...
Ultralow-power-consumption continuous-wave terahertz quantum cascade lasers enabled by few-period patch-antenna arrays
We demonstrate terahertz quantum cascade lasers (THz-QCLs) employing a few-period patch-antenna array as the resonant cavity, enabling a drastic reduction of the active-region area while preserving a...
Molecular beam epitaxy of ferroelectric ScAlN on <b> <i>β</i> </b> -Ga2O3 substrates
We demonstrate the epitaxial integration of ferroelectric ScAlN thin films on β-Ga2O3 substrates via molecular beam epitaxy without any buffer layers, enabled by surface pre-nitridation. The resulting...
Tunable spectral-directional infrared emittance with voltage-gated metal–oxide–semiconductor nanowires
Active control of thermal emission is increasingly important for applications in thermal management, infrared sensing, and energy conversion. While various approaches have been taken to achieve dynami...
Single-longitudinal-mode Hermite–Gauss and Laguerre–Gauss structured light based on an off-axis pumped Nd:YAG laser with twisted-mode cavity
We report a single-longitudinal-mode (SLM) high-order Hermite–Gauss (HG) transverse mode laser based on a twisted-mode cavity and off-axis pumping. Tunable-order HG mode output is generated from the 1...
Advanced null ellipsometry for ultrathin film thickness measurement
Ultrathin films have emerged as a versatile functional platform for electronic, optical, and optoelectronic technologies, spanning semiconductors, displays, and next-generation energy devices. Accurat...
Investigation of physical limit of subthreshold swing at cryogenic temperatures in dual-gate short-channel InZnO transistors
Subthreshold swing (SS) is a critical parameter determining transistor switching and is fundamentally limited by the energy band tails at cryogenic temperatures, which is still under investigation for...