Spurious-free A1-mode Lamb wave resonator with crescent-shaped busbars and high FoM of 360

S Shitao Lv (School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,) Q Qiner Xu (School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,) S Shibin Zhang P Pengcheng Zheng Y Yong Li Y Yi Cao Q Qiang Xu (Key Laboratory of Material Simulation Methods & Software of Ministry of Education, College of Physics) Z Zhi Dong C Chiyuan Ma H Haiyan Sun T Tengfei Xu (Research Center for Clinical Pharmacy, College of Pharmaceutical Sciences) J Jicong Zhao (School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,)

Abstract

In this letter, we demonstrate an effective route to suppress transverse spurious modes in A1-mode LiNbO3 Lamb wave resonators by shaping the busbars into a crescent profile. The resulting crescent-shaped excited bulk acoustic wave resonator (CS-XBAR) introduces a quadratic phase variation along the transverse direction, which establishes an energy gradient and drives destructive interference of transverse leakage waves at the busbar boundaries. A waveguide model shows that the suppression of higher-order transverse modes is maximized when a triple-busbar configuration is used and the curvature radius matches the resonator period. Devices are fabricated on a Z-cut LiNbO3-on-Si platform and exhibit a resonance frequency of 4.45 GHz with an electromechanical coupling coefficient kt2 of about 27.2%, a maximum Bode-Qmax of 1321, and a spurious-free admittance spectrum over the measured band, yielding a figure of merit kt2 × Bode-Qmax of about 360. Compared with co-fabricated straight single-busbar references, the CS-XBAR shows markedly enhanced spectral purity and is promising for low-loss N79-band 5G RF filters.

Article Details

Volume / Issue Vol. 128, Issue 18
Published May 04, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

S

Shitao Lv

School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,

Q

Qiner Xu

School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,

S

Shibin Zhang

P

Pengcheng Zheng

Y

Yong Li

Y

Yi Cao

Q

Qiang Xu

Key Laboratory of Material Simulation Methods & Software of Ministry of Education, College of Physics

Z

Zhi Dong

C

Chiyuan Ma

H

Haiyan Sun

T

Tengfei Xu

Research Center for Clinical Pharmacy, College of Pharmaceutical Sciences

J

Jicong Zhao

School of Microelectronics and School of Integrated Circuits (Jiangsu Key Laboratory of Semiconductor Device and IC Design, Package, and Test), Nantong University 1 , Nantong, Jiangsu 226019,