Preliminary demonstration of diamond-GaN <i>p–n</i> diodes via grafting
Abstract
Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high-power and high-frequency electronics. However, efficient doping in UWBG materials is typically limited to either n-type or p-type, constraining their application to unipolar devices. The realization of p–n junctions through heterogeneous integration of complementary UWBG (or WBG) semiconductors is hindered by lattice mismatch and thermal expansion differences. Here, we report the preliminary demonstration of diamond–GaN heterojunction p–n diodes fabricated via Grafting. A single-crystalline p+ diamond nanomembrane was integrated onto an epitaxially grown c-plane n−/n+ GaN substrate with an ultrathin ALD–Al2O3 interlayer. The resulting diodes exhibit an ideality factor of 1.55 and a rectification ratio of ∼104. Structural and interfacial properties were examined by AFM, XRD, Raman, and STEM, providing critical insights to guide further optimization of diamond–GaN p–n heterojunction devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (21)
Jie Zhou
Yi Lu
Chenyu Wang
Luke Suter
Fraunhofer USA Inc., Center Midwest 4 , East Lansing, Michigan 48824,
Aaron Hardy
Fraunhofer USA Inc., Center Midwest 4 , East Lansing, Michigan 48824,
Tien Khee Ng
Photonics Laboratory, Division of Computer, Electrical, and Mathematical Sciences and Engineering
Kai Sun
Yifu Guo
College of Physics, Qingdao University 1 , Qingdao 266071,
Yang Liu
Tsung-Han Tsai
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706,
Xuanyu Zhou
Connor S. Bailey
Northrop Grumman Corporation 8 , Redondo Beach, California 90278,
Michael Eller
Northrop Grumman Corporation 8 , Redondo Beach, California 90278,
Stephanie Liu
Northrop Grumman Corporation 8 , Redondo Beach, California 90278,
Zetian Mi
Boon S. Ooi
Photonics Laboratory, Division of Computer, Electrical, and Mathematical Sciences and Engineering
Matthias Muehle
Fraunhofer USA Inc., Center Midwest 4 , East Lansing, Michigan 48824,
Katherine Fountaine
Northrop Grumman Corporation 8 , Redondo Beach, California 90278,
Vincent Gambin
Northrop Grumman Corporation 8 , Redondo Beach, California 90278,
Jung-Hun Seo
Department of Materials Design and Innovation, University at Buffalo, The State University of New York 3 , Buffalo, New York 14260,
Zhenqiang Ma