Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures

H Hongjing Chen (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) Y Yuntong Xing (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) X Xia Wang G Guan Wang (State Key Laboratory of Magnetic Resonance and Atomic Molecular Physics, National Center for Magnetic Resonance in Wuhan, Innovation Academy for Precision Measurement Science and Technology) J Jinsong Wu (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, China.) A Aoyu Zhang Q Qinghua Hao (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) M Menghao Cai (State Key Laboratory of Bioreactor Engineering) X Xiaodie Chen (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) L Longde Li (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) W Wenzhanhong Chen (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,) J Jun-Bo Han (Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,)

Abstract

Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show that strong magnetic coupling occurs at the Fe3GeTe2/Fe3GaTe2 interface when the temperature is <80 K. By fixing the spin direction of Fe3GaTe2, large exchange bias can be generated in Fe3GeTe2 because of the magnetic pinning effect. Furthermore, the strength of exchange bias can be manipulated by applying an ultralow current between Fe3GeTe2 and Fe3GaTe2 layers without changing the temperature. These results provide potential ways for generating and manipulating exchange bias in two-dimensional (2D) materials and pave the way for implementing the 2D van der Waals exchange bias effect in spintronic devices.

Article Details

Volume / Issue Vol. 126, Issue 1
Published January 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

H

Hongjing Chen

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

Y

Yuntong Xing

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

X

Xia Wang

G

Guan Wang

State Key Laboratory of Magnetic Resonance and Atomic Molecular Physics, National Center for Magnetic Resonance in Wuhan, Innovation Academy for Precision Measurement Science and Technology

J

Jinsong Wu

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, China.

A

Aoyu Zhang

Q

Qinghua Hao

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

M

Menghao Cai

State Key Laboratory of Bioreactor Engineering

X

Xiaodie Chen

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

L

Longde Li

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

W

Wenzhanhong Chen

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,

J

Jun-Bo Han

Wuhan National High Magnetic Field Center and Department of Physics, Huazhong University of Science and Technology 1 , Wuhan 430074,