Torsion-induced rapid switching and tunability of multistable state ferroelectric polarization

B Boyu Zuo (MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,) X Xuhui Lou (MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,) Y Yu Chen W Wentao Jiang (School of Physical Science and Technology, Shanghai Key Laboratory of High-Resolution Electron Microscopy, State Key Laboratory of Advanced Medical Materials and Devices) Q Qingyuan Wang (Department of Physics) H Haidong Fan (Department of Mechanics & Engineering, Sichuan University 2 , Chengdu, Sichuan 610065,) C Chuan Qiao (MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,) X Xiaobao Tian (MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,)

Abstract

The pulse-based rapid domain structure switching method in ferroelectric memristors has stability and other issues, limiting its applications. In this study, we perform atomic simulations to investigate the polarization domain switching behavior of ferroelectric materials under non-pulse torsional loading. During torsion, uniformly distributed spontaneous polarization transitions to predominantly in-plane polarization and finally evolves to predominantly out-of-plane polarization. The out-of-plane polarization remains stable during torsion and can be adjusted through mechanical and electric fields to achieve multistability. This evolution behavior is attributed to the rapid increase in initial normal stress and continuous cyclic variation of shear stress during torsion. The non-pulse control method developed in this study lays the foundation for further research and utilization of polarization regulation in ferroelectric materials, potentially advancing the application of ferroelectric memristors.

Article Details

Volume / Issue Vol. 126, Issue 1
Published January 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

B

Boyu Zuo

MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,

X

Xuhui Lou

MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,

Y

Yu Chen

W

Wentao Jiang

School of Physical Science and Technology, Shanghai Key Laboratory of High-Resolution Electron Microscopy, State Key Laboratory of Advanced Medical Materials and Devices

Q

Qingyuan Wang

Department of Physics

H

Haidong Fan

Department of Mechanics & Engineering, Sichuan University 2 , Chengdu, Sichuan 610065,

C

Chuan Qiao

MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,

X

Xiaobao Tian

MoE Key Laboratory of Deep Earth Science and Engineering, College of Architecture and Environment, Sichuan University 1 , Chengdu, Sichuan 610065,