Applied Physics Letters
Articles in this Issue
Voronoi diagrams metallic mesh for transparent EMI shielding
Recently, the transparent electromagnetic interference (EMI) shielding film, which is optical transparent, conductive, and EMI shielding, is widely employed in fields of display, solar cell, EMI shiel...
Sub-cycle nanotip field emission of electrons driven by air plasma generated THz pulses
Terahertz pulses generated by two-color laser plasmas have reported peak field strengths exceeding MV/cm, and when illuminating metal nanotips, the near-field enhancement at the tip apex should result...
Junction-based deep mesa termination for multi-kilovolt vertical <b> <i>β</i> </b>-Ga2O3 power devices
Deep mesa is an effective edge termination widely deployed in high-voltage power devices. However, its effectiveness requires the minimal distance between mesa and electrode edge and is susceptible to...
Single-pixel microscopic imaging through complex scattering media
Microscopic imaging through complex scattering media is recognized to be challenging. Here, we report high-resolution single-pixel microscopic imaging through complex scattering media. This is develop...
Phase-gradient force-based optical array sorter
Microparticle sorting is crucial for applications in biomedicine, environmental monitoring, and biochip technology. However, traditional optical sorting methods often rely on external equipment, such...
Surface phonons in the 1/f noise of Bi2Se3
Temperature dependence of the 1/f noise intensity in Bi2Se3 features a weak structure of unknown origin. Comparing the noise structure with the Raman spectrum of Bi2Se3, we found that it is the image...
Erratum: “Oxygen diffusion coefficients in ferroelectric hafnium zirconium oxide thin films” [Appl. Phys. Lett. <b>124</b>, 252905 (2024)]
GaN-based shallow-trench vertical Hall devices
In this Letter, a GaN-based vertical Hall device is designed and experimentally fabricated, offering an effective solution for in-plane magnetic field detection. By introducing a shallow trench struct...
Hanle spin precession induced inverted magnetoresistance in chiral/semiconductor systems
In the past decade, chiral materials have drawn significant attention because it is widely claimed that they can act as spin injectors/detectors due to the chirality-induced spin selectivity effect. N...
Te nanomesh-monolayer WSe2 vertical van der Waals heterostructure for high-performance photodetector
Recently, two-dimensional tungsten diselenide (WSe2) has attracted extensive attention due to their unique properties, exhibiting excellent properties in electronics, optoelectronics, and valleytronic...
Fabrication and characterization of heteroepitaxial Zn2GeO4 films on sapphire via radio frequency magnetron sputtering
In this study, we explored the fabrication, structural characteristics, and optical properties of Zn2GeO4 thin films grown on c-cut Al2O3 substrates via radio frequency magnetron sputtering. The cryst...
Physics-informed genetic algorithms (PIGAs) facilitating LIBS spectral normalization with shockwave characteristics
Inspired by physics-informed neural networks (PINNs) inheriting both the interpretability of physical laws and the efficient integration capability of machine learning, we propose a framework based on...
High-throughput screening and research of nitrogen reduction on 2D metal–organic framework: First-principles study
Developing efficient nitrogen reduction reaction (NRR) catalysts remains challenging. Two-dimensional metal–organic frameworks (MOFs) stand out because of their large holes and high metal utilization....
Point defect diffusion in III-nitrides: A key mechanism for thermal degradation and non-radiative recombination in GaInN/GaN quantum well structures
Various forms of thermal degradation of light emitters based on III-nitrides have been observed, with no clear conclusion about the mechanism. We investigate the non-radiative carrier lifetime in GaIn...
Efficient spintronic THz emitters without external magnetic field
We investigate the performance of state-of-the-art spintronic THz emitters (W or Ta)/CoFeB/Pt with non-magnetic underlayer deposited using oblique angle deposition. The THz emission amplitude in the p...
Investigating spin-orbit interaction of light in micro- and nanophotonic systems using polarization Mueller matrix
Coupling between the spin and orbital angular momentum of light has led to a variety of exotic spin–orbit photonic effects, establishing a paradigm of nanophotonic meta-devices to control and manipula...
Thermalization of a flexible microwave stripline measured by a superconducting qubit
With the demand for scalable cryogenic microwave circuitry continuously rising, recently developed flexible microwave striplines offer the tantalizing perspective of increasing the cabling density by...
Chiral correlated-plasmons enhanced Raman optical activity from spin-polarized, correlated <i>s</i> band in highly oriented single-crystalline gold quantum-dots
Interactions of chiral light with chiral matter, such as Raman optical activity (ROA) and, independently, spin-polarized materials have attracted a lot of interest for both fundamental science and app...
Ultrahigh field-effect mobility of 147.5 cm2/Vs in ultrathin In2O3 transistors via passivating the surface of polycrystalline HfO2 gate dielectrics
This study presents considerable improvements in the electrical characteristics of atomic-layer-deposited 3-nm-thick In2O3 thin-film transistors (TFTs), which were achieved by introducing a 2-nm-thick...
Mechanism of selective SiO2/photoresist reactive ion etching in an inductively coupled plasma operated in a C4F8/H2 gas mixture
A reactive ion etch process that achieves high selectivity between SiO2 and photoresist (PR) and based on C4F8/H2 chemistry in an inductively coupled radio frequency plasma is developed. The process i...
Single mode, distributed feedback interband cascade lasers grown on Si for gas sensing
A single mode distributed feedback (DFB) interband cascade laser (ICL) grown on a (001) Si substrate has been developed. The designed DFB ICL with a grating on top of the ridge emits at a wavelength n...
Enhanced electronic property of wafer-scale monolayer MoS2 through S/Mo ratio optimization
Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, represents the ultimate thickness for scaling down channel materials beyond silicon to overcome the limit of semi...
Non-hexagonal symmetry-induced QH-graphene as a promising anode material for sodium-ion batteries: Effects of solvent, vacancy defect, and interlayer coupling
Developing two-dimensional (2D) carbon electrode materials with high performance has become an increasingly fascinating pursuit. However, the most popular carbon allotrope, graphene, possesses chemica...
Enhancing radiation hardness of microelectronics through stress-relief milling
Single event effects (SEE) in microelectronic devices are predominantly studied from the perspective of electrical charge generation and collection. This study introduces a multi-physics concept by in...
Band structure engineering in 2D BA2PbI4/InSe perovskite heterostructures and superlattices
Periodic stacking of two van der Waals materials enables the realization of superlattice structures with artificial design of band structure. Two-dimensional perovskites offer structural flexibility f...