GaN-based shallow-trench vertical Hall devices

Abstract

In this Letter, a GaN-based vertical Hall device is designed and experimentally fabricated, offering an effective solution for in-plane magnetic field detection. By introducing a shallow trench structure between the excitation and sensing electrodes, the short-circuit current flowing into sensing contacts in GaN-based vertical Hall devices was strongly suppressed. Through TCAD simulation analysis, the optimal range of the shallow trench depth was determined, which was then confirmed by the experimental data. From the experimental results, the sensitivity was found to be improved by 4674.7%, from 3.8 to 177.6 mV/AT, while nonlinearity was reduced by 95.5%, from 19.17% to 0.87%. The effects of device width and sensing electrode length on the device performance were also investigated in detail. Finally, this work experimentally validated the device's angle detection capability, indicating that the GaN-based vertical Hall sensor could be combined with the currently well-established horizontal Hall sensors to create high-performance monolithic integrated three-dimensional Hall sensors.