Enhanced electronic property of wafer-scale monolayer MoS2 through S/Mo ratio optimization
Abstract
Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, represents the ultimate thickness for scaling down channel materials beyond silicon to overcome the limit of semiconductor technology nodes in the sub-1 nm range. However, despite extensive efforts in the growth of monolayer single-crystal MoS2, growth optimization for higher electronic property and reproducible fabrication for satisfying industrial stability still need to be reported. Here, we report an approach to synthesize wafer-scale monolayer single-crystal MoS2 with high carrier mobility and on/off ratio on sapphire by controlled release of S/Mo precursors ratio during the chemical vapor deposition process. We infer that the main cause of the mismatch in the stoichiometric S/Mo ratio is the oxygen doping. It is found that the MoSx film (x = 1.94) has rather high optimization, as confirmed by the relatively high electronic performances of related devices. Specifically, a fabricated field-effect transistor (FET) array based on the single-crystal monolayer MoS1.94 channels demonstrates significant enhancement in room-temperature mobility (up to 122 cm2 V−1 s−1) and an exceptional on/off ratio (over 1010). This work provides an efficient and reliable approach to produce single-crystal monolayer MoS2 for high-performance microelectronics in the future.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (16)
Rongxiang Ding
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,
Ziyang Zhang
Ye Huang
Jiangxi Provincial Key Laboratory of Respiratory Diseases, Jiangxi Institute of Respiratory Diseases, The Department of Respiratory and Critical Care Medicine, The First Affiliated Hospital, Jiangxi Medical College, Nanchang University
Hao Wu
Xueheng Yan
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,
Daobing Zeng
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,
Yunyu Hong
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,
Hao Yin
Taotao Li
Lei Liu
Shitong Zhu
Guanyu Liu
Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, New Cornerstone Science Laboratory, National Center for Nanoscience and Technology of China
Zhongying Xue
Miao Zhang
State Key Laboratory of Advanced Materials for Intelligent Sensing, Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science
Ziao Tian
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Zengfeng Di
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences