Fabrication and characterization of heteroepitaxial Zn2GeO4 films on sapphire via radio frequency magnetron sputtering
Abstract
In this study, we explored the fabrication, structural characteristics, and optical properties of Zn2GeO4 thin films grown on c-cut Al2O3 substrates via radio frequency magnetron sputtering. The crystalline quality, surface morphology, and optical characteristics were comprehensively evaluated at various annealing temperatures, and the 700 °C-annealed film presented the best crystallization quality. XRD and TEM results revealed the microstructure of Zn2GeO4 film and confirmed that the epitaxial relationship is Zn2GeO4 (0006)//Al2O3 (0006) with Zn2GeO4 [11¯00]//Al2O3 [11¯00]. O 1s spectrum indicated the bandgap of the 700 °C-annealed film is 4.98 eV. UV-Vis-Near Infrared spectroscopy showed that the average transmittance reached approximately 85% in the visible region, and the optical bandgap of Zn2GeO4 film annealed at 700 °C was about 5.02 eV.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Kai Niu
Tianjin Infraytech Co., LTD 3 , Tianjin 300384,
Xueting Du
School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology 1 , Tianjin 300384,
Wei Mi
Di Wang
Lin'an He
School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,
Liwei Zhou
Yan Zhu
Juan Wang
Department of Chemical and Biomolecular Engineering
Xingcheng Zhang
Institute of Microelectronics of the Chinese Academy of Science 2 , Beijing 100029,
Jinshi Zhao
State Key Laboratory of Crystal Materials School of Materials Science and Engineering Tianjin University of Technology Tianjin 300384 China