Applied Physics Letters

Vol. 126, Issue 8 Issue 8 2025
70
Articles

Articles in this Issue

High-frequency magnetic properties of modified Cu–Ni 18H ferrites with low magnetic loss up to 6 GHz for 5G communications

Zhibiao Xu, Guowu Wang, Sha Zhang et al. Feb 24, 2025 10.1063/5.0251624

Rapidly developing fifth-generation (5G) communications urgently require a ferrite material with high permeability and low magnetic loss in frequency bands up to 6 GHz. However, none of the present ma...

Retainable large magnetoelectric coupling in BiFeO3@CoFe2O4 core-shell nanoparticle embedded P(VDF-TrFE) matrix

Chenyang Wang, Lingfang Xu, Xiang Lv et al. Feb 24, 2025 10.1063/5.0250766

Flexible magnetoelectric composite devices have exceptional features and potential in peculiar scenes. However, maintaining the magnetoelectric response under extreme bending conditions remains a chal...

Realizing sub-6-nm-channel high-performance spin field-effect transistors in lateral Sc2CHO/Sc2CHF/Sc2CHO heterojunctions

Shao-Xian Wang, Ya-Qi Kong, Ming-Lang Wang et al. Feb 24, 2025 10.1063/5.0252146

In this work, nanoscale spin field-effect transistors (spin-FETs) based on lateral heterojunctions composed of two-dimensional (2D) ferromagnetic half-metallic Sc2CHO electrodes and nonmagnetic semico...

Rapid preparation of high-performance Mg2Sn thermoelectric materials and their unique role in metal-air batteries

Xinpeng Luan, Haodong Liu, Shipeng Wu et al. Feb 24, 2025 10.1063/5.0254219

Magnesium-air batteries hold potential applications due to their high energy density and environmental friendliness. However, the formation of passivation films and the suboptimal standard electrode p...

High-yield growth of high-quality cubic BAs single crystals using the Bridgman method

Wenhao Liu, Pawan Koirala, Evan R. Glaser et al. Feb 24, 2025 10.1063/5.0245911

The increasing complexity of semiconductor devices fabricated from wide-bandgap and ultra-wide-bandgap materials demand advanced thermal management solutions to mitigate heat buildup, a major cause of...

A high-<i>T</i> <i>c</i> superconducting diode with large current carrying capacity

J. M. Brooks, R. Mataira, T. Simpson et al. Feb 24, 2025 10.1063/5.0248777

Superconducting diodes enable lossless current flow in one direction and could serve in a variety of applications similar to their semiconductor counterparts, such as current rectification, temperatur...

Magnonic Fabry–Pérot resonators as programmable phase shifters

Anton Lutsenko, Kevin G. Fripp, Lukáš Flajšman et al. Feb 24, 2025 10.1063/5.0251358

We explore the use of magnonic Fabry–Pérot resonators as programmable phase shifters for spin-wave computing. The resonator, composed of an yttrium iron garnet film coupled with a CoFeB nanostripe, op...

Temperature-dependent random telegraph signal in Co/CoO/Co point contact devices

Zhongyang Ren, Muchan Li, Jiaojiao Tian et al. Feb 24, 2025 10.1063/5.0248880

Nanoscale Co/CoO/Co point contact devices are promising for spintronics, magnetic sensors, single-electron transistors, and memory devices. We fabricated Co/CoO/Co point contact devices and studied th...

Strong coupling of excitons in a two-dimensional atomic crystal with quasi-bound state in the continuum supported by a single nanoparticle

Qi Ding, Xun Zhou, Peng Xie et al. Feb 24, 2025 10.1063/5.0250193

Bound states in the continuum (BICs) supported by high-index dielectric nanoparticles have garnered significant attention due to their ability to achieve subwavelength confinement with high-quality fa...

Tailoring transverse magneto-optical Kerr effect enhancement in Mie-resonant nanowire-based metasurfaces

K. A. Mamian, V. V. Popov, A. Yu. Frolov et al. Feb 24, 2025 10.1063/5.0257020

Tailoring of the transverse magneto-optical Kerr effect (TMOKE) in hybrid metasurfaces comprising rectangular silicon nanowires coupled with a nickel substrate is demonstrated. The excitation of Mie m...

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

X. Q. Guo, F. J. Xu, J. Lang et al. Feb 24, 2025 10.1063/5.0221287

The effects of the radio frequency (RF) bias power of inductively coupled plasma etching on the electrical properties of n-type Ohmic contact have been investigated. By reducing the RF bias power, a h...

Modulation of nonlinearity and asymmetry in a spin–orbit torque driven artificial synapse

Arun Jacob Mathew, John Rex Mohan, Chisato Yamanaka et al. Feb 24, 2025 10.1063/5.0248325

Unconventional computing schemes inspired by biological neural networks are being explored with ever growing interest to eventually replace traditional von Neumann architecture-based computation. Real...

Large positive VFB shift achieved by a band alignment modulated with insertion of Ga2O3 dipole layer

Xiao-na Zhu, Lei Shen, Yu-Chun Li et al. Feb 24, 2025 10.1063/5.0252518

In this Letter, a Ga2O3 dipole layer deposited at the SiO2/HfO2 interface by in situ atomic layer deposition (ALD) has been demonstrated to be a great positive dipole. Through the in situ ALD of 10–30...

Valley polarization in two-dimensional zero-net-magnetization magnets

San-Dong Guo Feb 24, 2025 10.1063/5.0250823

Valleytronics in two-dimensional (2D) zero-net-magnetization magnets exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field and terahertz dynamics. The zero-...

Tunable sliding ferroelectricity in two-dimensional van der Waals RuX2 (X = Cl, Br, and I) multiferroic layers

Peng Han, Jingtong Zhang, Xumin Chen et al. Feb 24, 2025 10.1063/5.0249647

Two-dimensional (2D) van der Waals (vdW) materials offer vast potential for designing ferroelectrics with desired properties through simple layer stacking. Here, based on first principles, we demonstr...

Band engineering for large perpendicular magnetocrystalline anisotropy and low magnetic Gilbert damping constant by anion substitution at Fe/MgO interface

Y.-N. Apriati, K. Nawa, K. Nakamura Feb 24, 2025 10.1063/5.0248379

Large interfacial perpendicular magnetocrystalline anisotropy (iPMA) and low Gilbert magnetic damping constant (α) in magnetic tunnel junctions (MTJs) are desired to achieve higher storage density and...

Efficient quantum frequency conversion of ultra-violet single photons from a trapped ytterbium ion

Seungwoo Yu, Kyungmin Lee, Sumin Park et al. Feb 24, 2025 10.1063/5.0241469

Ion trap system is a leading candidate for quantum information science benefitting from its long coherence time, high-fidelity gate operations. In addition, the ion photon entanglement provides a vers...

Optical absorption stacking modulation in atypical multilayer graphene

Ailing Ge, Xiaoyang Ma Feb 24, 2025 10.1063/5.0246705

With graphene layers increasing, the interlayer charge transfers would generate an out-of-plane electric dipole moment, which is directly related to the optical absorption according to the Fermi Golde...

Growth of nitrogen-doped (010) <i>β</i>-Ga2O3 by plasma-assisted molecular beam epitaxy using an O2/N2 gas mixture

Steve Rebollo, Yizheng Liu, Carl Peterson et al. Feb 24, 2025 10.1063/5.0250037

In this study, we report on the intentional nitrogen doping of plasma-assisted MBE (PAMBE)-grown (010) β-Ga2O3 films by generating the growth plasma with an O2 and N2 gas mixture. A nitrogen doping ra...

Aberration measurement by electron ptychography and consistency among different algorithms

Tizian Lorenzen, Benedikt Diederichs, Charles Otieno Ogolla et al. Feb 24, 2025 10.1063/5.0238580

Control over and knowledge of the electron probe is important in all scanning transmission electron microscopy (STEM) techniques. This is emphasized especially in electron ptychography, where the accu...

High-frequency/high-field electron paramagnetic resonance generalized spectroscopic ellipsometry characterization of Cr3<b>+</b> in <b> <i>β</i> </b>-Ga2O3

Viktor Rindert, Zbigniew Galazka, Mathias Schubert et al. Feb 24, 2025 10.1063/5.0255802

Electron paramagnetic resonance of Cr3+ ions in β-Ga2O3 is investigated using terahertz spectroscopic ellipsometry under magnetic field sweeping, a technique that enables the polarization resolving ca...

Elegant high-order harmonic vortices generation

C. Granados, Bikash K. Das, Wenlong Gao et al. Feb 24, 2025 10.1063/5.0247749

High-order harmonic generation is a cornerstone of attosecond science, with applications spanning from spectroscopy to the creation of ultrashort light pulses with temporal duration falling in the att...

A site-selection multi-element co-doping strategy in three-layered bismuth-based layered perovskite-like structure ferroelectrics leads to large energy storage capability

Y. Zhang, D. P. Song, Y. Lei et al. Feb 24, 2025 10.1063/5.0255325

Improving the energy storage density of dielectric capacitors, which are widely used in power electronic devices, is a continuous challenge. In this work, a site-selection multi-element co-doping stra...

Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure

Yani Li, Heyuan Zheng, Jinhua Li et al. Feb 24, 2025 10.1063/5.0253662

Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to the synergy effect of different dimensions. Most reported 0D/1D heteroju...

Multi-band nonreciprocal thermal radiation based on Weyl semimetals with epsilon-near-zero multilayers

Yu Chen Li, Shi Hui Fu, Qi Weng et al. Feb 24, 2025 10.1063/5.0249362

Although various nonreciprocal thermal emitters have been suggested to break the balance between absorption and emission, few structures can achieve strong nonreciprocity in more than three bands. To...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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