Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

X. Q. Guo; F. J. Xu; J. Lang; J. M. Wang; L. S. Zhang; C. Ji; C. Z. Ji; Z. Y. Zhang; F. Y. Tan; Y. Wu; X. N. Kang; X. L. Yang; N. Tang; X. Q. Wang; W. K. Ge; B. Shen

doi:10.1063/5.0221287

Effects of the RF bias power of ICP etching on the electrical properties of n-type Ohmic contact on high-Al-fraction AlGaN

X X. Q. Guo (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) F F. J. Xu (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) J J. Lang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) J J. M. Wang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) L L. S. Zhang (Beijing SinoGaN Semiconductor Technology Co., Ltd. 2 , Beijing 101399,) C C. Ji (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) C C. Z. Ji (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) Z Z. Y. Zhang F F. Y. Tan (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) Y Y. Wu X X. N. Kang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) X X. L. Yang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) N N. Tang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) X X. Q. Wang (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) W W. K. Ge (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,) B B. Shen (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,)

Abstract

The effects of the radio frequency (RF) bias power of inductively coupled plasma etching on the electrical properties of n-type Ohmic contact have been investigated. By reducing the RF bias power, a high-quality n-type Ohmic contact has been achieved on n-Al0.70Ga0.30N, with a specific contact resistivity of 1.2 × 10−4 Ω cm2. It is confirmed that low-power etching introduces fewer acceptor-state defects on the etched surface, which not only reduces the compensation for electrons but also reduces the degree of oxidation on the etched surface, providing favorable conditions for improving the electrical properties of metal–semiconductor contacts.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 126, Issue 8

Published February 24, 2025

DOI 10.1063/5.0221287

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences