Applied Physics Letters
Articles in this Issue
Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmospher...
Robust low-temperature ferroelectric behavior of Al0.75Sc0.25N films
Al1−xScxN, which combines excellent ferroelectric properties with the advantages of wide-bandgap nitride materials, offers emerging opportunities for breakthroughs in next-generation microelectronics....
Sb2S3 indoor photovoltaics with a charge-transport-layer-free sandwich-structure
Indoor photovoltaics (IPVs) attract tremendous attention for powering low-power electronics through harvesting light energy from indoor ambient environments. Sb2S3 is a promising IPV light-harvesting...
Engineering polarization anisotropy in WSe2/CrOCl heterostructures via magnetic and strain effects
Two-dimensional transition metal dichalcogenides show potential for optoelectronic applications owing to their exceptional excitonic properties. While optical anisotropy driven by symmetry breaking ha...
Tunneling magnetoresistance in altermagnetic tunnel junctions with the half-metal electrode
As a critical component of high-efficiency and low-power memory devices, the development of magnetic tunnel junctions (MTJs) with large tunneling magnetoresistance (TMR) is highly demanded. Altermagne...
Significant ballistic thermal transport across graphene layers: Effect of nanoholes and lithium intercalation
Porous graphene and graphite are increasingly utilized in electrochemical energy storage and solar-thermal applications due to their unique structural and thermal properties. In this study, we conduct...
Characterization of ferroelectric switching in 43 nm Y-36 lithium niobate films
Lithium niobate (LN) is a promising ferroelectric material used for emerging memories and radio frequency (RF) micromechanical resonators. The ferroelectric behavior of the bulk properties of LN has b...
Large thermoelectricity and Nernst effect at low temperature in quasi-one-dimensional <i>A</i>Mn6Bi5 (<i>A</i> = alkali metals)
Searching for promising materials that show large thermoelectricity or the Nernst effect at low temperatures is critical for cryogenic refrigeration applications. In this work, we investigated systema...
Inversion of the internal electric field using delta doping in Al0.3Ga0.7N/GaN heterostructures
Controlling the internal electric field in III-nitride heterostructures is essential for optimizing device performance. These fields, arising from polarization effects, impact carrier confinement, wav...
Strategically optimized diffusion dynamics in Ni9S8 nanoflower architectures for high-performance asymmetric supercapacitors
The growing demand for sustainable solutions in future electronic systems has accelerated the replacement of outdated devices with more efficient and reliable technologies. In this context, surface-co...
Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node
As data processing demands increase, embedded flash is advancing toward low power consumption, low manufacturing cost, and high operation speed, as well as large memory windows (MW). A self-aligned sp...
Dual-functional Cu-MOF modifies buried interfaces for high-performance and stable MAPbI3 photodetectors
Lead halide perovskites have emerged as promising materials for high-performance optoelectronic devices due to their exceptional optoelectronic properties. Nevertheless, defect states of perovskite th...
Thin-film vertical monolithic III-nitride optoelectronic system
III-nitride multi-quantum well (MQW) diodes are multifunctional devices and exhibit intriguing spectral overlap between emission and responsivity spectra. By reducing device thickness, thin-film verti...
A phase jump phenomenon within the beat signal for dynamic target measurement in frequency-sweeping interferometry
Frequency-sweeping interferometry (FSI) is an advanced coherent measurement technique capable of simultaneous high-precision measurement of dynamic target absolute distance and velocity. This study re...
Phonon-mediated shift currents in twisted bilayer MoS2
Twisted bilayer molybdenum disulfide (MoS2) exhibits significant bulk photovoltaic effects (BPVE) due to its unique moiré superlattice, which introduces nontrivial quantum geometry and modulates the e...
Characteristics of carrier localization and their effects on minority carrier lifetime in InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattices
Advanced infrared optoelectronic devices fabricated using antimony-based type-II superlattices have progressed significantly in recent years. However, fundamental challenges remain in the understandin...
Carrier mobility in Janus WBAs X2 (X= S, Se, Te) governed by electron–phonon scattering: A first-principles study
Two-dimensional materials have emerged as key candidates for next-generation electronic and optoelectronic applications due to their unique structural and electronic properties. Accurate evaluation of...
Standard Li+/Li redox potential at the Li/amorphous-Li3PO4 interface probed by photoelectron spectroscopy for all-solid-state (photo)electrochemical systems
(Photo)electrochemistry in all-solid-state systems has advanced significantly, driven by the improvement of superionic conductors used as solid electrolytes. However, no general reference electrodes e...
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievabl...
Tunable transparency and detectivity in ST-OPDs enabled by donor-acceptor engineering for advanced NIR imaging application
Near-infrared (NIR) semitransparent organic photodetectors (ST-OPDs) face inherent trade-off between visible transparency and NIR detectivity. This study resolves this challenge through systematic opt...
Controlled synthesis of large-area MoS2/MoO2 heterostructure via one-step, two-stage chemical vapor deposition for electrocatalytic hydrogen evolution reaction
Two-dimensional (2D) materials and heterostructures with tunable dimensions present exciting opportunities for functional applications in next-generation devices. However, conventional methods such as...
Mixed wave mode: Direct evidence of phase transition during uphill-diffusion-based regular pattern formation
The formation of uphill-diffusion-based regular patterns in thin films of solutions was reported two years ago, which was explained as phase transition under non-equilibrium conditions in spinodal dec...
Observation of three types of NDR in flexible VOx Mott memristors
In this study, the negative differential resistance (NDR) phenomenon in a flexible VOx Mott memristor has been investigated. Our findings indicate that these memristors can exhibit three NDR phenomena...
Opto-acoustic resonance-enabled ultra-low phase noise microwave generation via coupled optoelectronic oscillators
Ultra-low phase noise microwave sources constitute critical components for advanced information and communication systems. This study presents a coupled optoelectronic oscillator (COEO) based on forwa...
Defects-driven abnormal thermal expansion behavior
Low thermal expansion alloys are typically developed by incorporating negative thermal expansion materials into metal matrices. However, the mismatches of lattice structure and opposite thermal expans...