Controlled synthesis of large-area MoS2/MoO2 heterostructure via one-step, two-stage chemical vapor deposition for electrocatalytic hydrogen evolution reaction

S Shiwei Zhang Z Zhiwei Zhang (Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering) Y Yulong Hao (School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University 1 , Xiangtan 411105,) A Aolin Peng (School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University 1 , Xiangtan 411105,) J Jie Zhou J Jin Li G Guolin Hao (School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University 1 , Xiangtan 411105,)

Abstract

Two-dimensional (2D) materials and heterostructures with tunable dimensions present exciting opportunities for functional applications in next-generation devices. However, conventional methods such as two-step chemical vapor deposition (CVD) or mechanical exfoliation for constructing heterostructures often encounter issues such as interfacial contamination and limited structural diversity, making it difficult to meet the demands of diverse applications. Herein, we present a one-step, two-stage CVD strategy that enables the controllable synthesis of high-quality, large-area MoS2/MoO2 heterostructures. By precisely regulating the concentration of the metal source precursor, the MoS2/MoO2 heterostructure structures can be effectively extended to different dimensions, including 2D/0D, 2D/1D, and 2D/2D. Furthermore, this synthesis strategy exhibits excellent universality, as demonstrated by its application to the MoSe2/MoO2 heterostructure system. Compared to individual MoS2 and MoO2, the MoS2/MoO2 heterostructure demonstrates significantly enhanced electrocatalytic hydrogen evolution performance. Kelvin probe force microscopy further confirms the existence of a Schottky barrier height at the MoS2/MoO2 interface, which effectively facilitates interfacial charge transfer. This work demonstrates a simple and efficient strategy for fabricating multidimensional heterostructures, providing important experimental support for future functional devices based on heterostructure materials.

Article Details

Volume / Issue Vol. 127, Issue 8
Published August 25, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

S

Shiwei Zhang

Z

Zhiwei Zhang

Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering

Y

Yulong Hao

School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University 1 , Xiangtan 411105,

A

Aolin Peng

School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University 1 , Xiangtan 411105,

J

Jie Zhou

J

Jin Li

G

Guolin Hao

School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Xiangtan University 1 , Xiangtan 411105,