Thin-film vertical monolithic III-nitride optoelectronic system
Abstract
III-nitride multi-quantum well (MQW) diodes are multifunctional devices and exhibit intriguing spectral overlap between emission and responsivity spectra. By reducing device thickness, thin-film vertical (TFV) MQW diodes not only inhibit confined optical waveguide modes but also achieve mode-matching light emission or detection naturally. Here, we monolithically integrated TFV MQW diodes on a III-nitride-on-silicon platform that separately serve as a light-emitting diode and a photodiode. The experimental results confirm that TFV devices reduce the number of confined waveguide modes and eliminate transverse light crosstalk, which leads to a significant reduction in the background photocurrent level at 10−9 A. The monolithic III-nitride optoelectronic systems demonstrate the great potential for full-duplex visible light communication and proximity sensing.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Fan Shi
Ministry of Education Key Lab for Cellular Dynamics, School of Life Sciences, Division of Life Sciences and Medicine, University of Science and Technology of China
Chengxiang Jiang
GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,
Jiaqi Yin
Jiawei Shi
Mingyuan Xie
School of Physics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 1 , Guangzhou 510275,
Jiabin Yan
GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,
Hongbo Zhu
Institute of Genetics and Crop Breeding, Fujian Agriculture and Forestry University
Yongjin Wang
School of Geography, Nanjing Normal University