Ultralow-Ohmic-contact resistance of Ni/Ag/NiO on p++-GaN/p-GaN/AlGaN/GaN platform
Abstract
A record-low Ohmic contact resistance is obtained on p++-GaN/p-GaN/GaN/AlGaN/GaN epitaxial structure designed for GaN CMOS circuit. Ni/Ag/NiO (1/120/6 nm) after 500 °C/360 s annealing in air atmosphere demonstrates an ultralow contact resistance (1.67 Ω mm) and the lowest specific contact resistivity (6.48 × 10–7 Ω cm2) reported so far. The employment of a NiO capping layer on Ni/Ag metal stack has improved the annealing thermal stability and electrical properties.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Zhiwei Sun
State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, Department of Chemistry, College of Chemistry and Chemical Engineering
Tianyu Zhao
Maoqing Ling
Department of Electrical and Electronic Engineering, the School of Advanced Technology, Xi'an Jiaotong-Liverpool University 4 , Suzhou 215123,
Jingang Li
Hao Tian
Shanghai Research Institute of Petrochemical Technology
Weisheng Wang
Yuanlei Zhang
School of Physics and Electronic Engineering, Qujing Normal University 2 , Qujing 655011,
Jie Zhang
Yinchao Zhao
Department of Electrical Engineering and Electronics, University of Liverpool 2 , Liverpool L69 3GJ,
Ivona Z. Mitrovic
Harm Van Zalinge
Kain Lu Low
Department of Electrical and Electronic Engineering, The School of Advanced Technology, Xi'an Jiaotong-Liverpool University 1 , Suzhou 215123,
Sen Huang
Wen Liu