Applied Physics Letters

Vol. 127, Issue 18 Issue 18 2025
56
Articles

Articles in this Issue

Multi-step nucleation of magnetic domains

Xinyu Qiang, Biao Wu, Xuefeng Zhao et al. Nov 03, 2025 10.1063/5.0282414

Magnetic domain nucleation is one of the central topics in magnetism and spintronics, with its detailed mechanism having been a subject of ongoing debates. Here, we show that magnetic domain nucleatio...

Interfacial energy filtering and phonon scattering enable thermoelectric enhancement in Ag2Se/silicate aerogel composites

Cheng-Lung Chen, Yun-Xuan Xie Nov 03, 2025 10.1063/5.0293672

The thermoelectric (TE) performance of narrow-gap semiconductors near room temperature is fundamentally limited by the coupling of carrier and phonon transport. Here, we demonstrate that trace incorpo...

Highly reliable perovskite-based memristors using Ag nanoparticles/FA2PbI4 junctions for enhanced memory and optoelectronic synaptic performance

P. Bousoulas, S. Orfanoudakis, V. Pagonis et al. Nov 03, 2025 10.1063/5.0299684

The hybrid nature of metal halide perovskites endows them with unique optoelectronic properties, which can be leveraged for developing next-generation memory devices with a small energy footprint. How...

Plasmon-enhanced optical transparency in graphene/Ag/graphene composite thin films

Ren Kojima, Shiguma Aoki, Kintaro Nakazawa et al. Nov 03, 2025 10.1063/5.0288175

This study presents a transparent conductive film (TCF) based on a graphene/Ag/graphene (G/Ag/G) sandwich structure. An enhancement in the optical transparency of Ag in the visible wavelength region w...

Synergistic multi-site and surface reconstruction in medium-entropy FeCoNiCuS homogeneous junction for efficient oxygen evolution

Wenwu Zhao, Zhuofan Shen, Guoliang Sun et al. Nov 03, 2025 10.1063/5.0301993

This FeCoNiCuS medium-entropy homogeneous junction catalyst, made via a simple hydrothermal method, offers exceptional stability and efficiency for oxygen evolution. It dynamically transforms during u...

Electron scattering at Ru(0001) surfaces: Effect of Ti caps and oxygen exposure

Sadiq Shahriyar Nishat, Daniel Gall Nov 03, 2025 10.1063/5.0283448

In situ transport measurements on 7 nm thick epitaxial Ru(0001)/Al2O3(0001) films with and without Ti cap layers during low-pressure 0.05 mTorr O2 exposure are employed to examine the impact of surfac...

Charge-fluid heating in quasi-ballistic plasmonic FETs

V. A. Kochelap, M. Yelisieiev Nov 03, 2025 10.1063/5.0293820

We have studied the thermal effects in quasi-ballistic plasmonic field effect transistors (FETs), for which the total energy of the plasma fluids does not dissipate, because the inelastic scattering i...

Topological polar textures on CsPbBr3 nanoplatelets

Monika Bhakar, Pooja Bhardwaj, Gokul M. Anilkumar et al. Nov 03, 2025 10.1063/5.0301259

Polar topological textures like the bubble domains, flux closures, labyrinths, etc., unlock functional responses in ferroic systems but are difficult to stabilize and control in chemically simple, sol...

Laser-induced surface restructuring of carbon dots enables tunable multicolor photoluminescence via microcavity confinement

Chuanxin Yan, Lin Chen, Chunguang Zhai et al. Nov 03, 2025 10.1063/5.0303066

Photochromic carbon dots (CDs) with high-contrast and tunable multicolor emission in solution hold great promise for the development of versatile light emitters. However, achieving such properties thr...

A hole transport material with low cross-linking temperature for high-performance blue quantum dot light-emitting diodes

Xinyu Zhang, Xuerui Zheng, Kexin Wang et al. Nov 03, 2025 10.1063/5.0273386

Inefficient hole injection poses a major challenge in the realization of stable and economically feasible solution-processed blue quantum dot light-emitting diodes (QLEDs). The advancement of hole tra...

Structural and optical properties of 100 mm AlN bulk single crystals

T. Njuguna, H. Alwan, K. Hogan et al. Nov 03, 2025 10.1063/5.0300352

AlN is a critical ultrawide bandgap (UWBG) semiconductor used in high-power electronics and deep-ultraviolet optoelectronic devices. While 2-in. AlN wafers are commercially available, scaling up to la...

Interface-dependent fragile-to-strong kinetic feature in two-dimensional confined phase-change nano-films

Shengju Wang, Sisi Chen, Yimin Chen et al. Nov 03, 2025 10.1063/5.0289877

In addition to conventional doping strategies, nano-structuring combined with interfacial engineering has recently emerged as a promising approach for enhancing phase-change material (PCM) performance...

The formation of elliptical Néel-type skyrmions via anisotropic exchange and Dzyaloshinskii–Moriya interactions

Zhichao Zhang, Yufei Xue, Qiuyao Zhang et al. Nov 03, 2025 10.1063/5.0288764

We demonstrate control over elliptical Néel skyrmion morphology and stability in 2D chiral magnets through synergistic engineering of anisotropic interactions: exchange anisotropy (ηJ) and Dzyaloshins...

Optimal layer thickness and junction temperature of GaN HEMTs based on bias-dependent non-uniform heat source model

Dan Wu, Bing-Yu Gan, Qi Luo et al. Nov 03, 2025 10.1063/5.0295152

Accurate thermal simulation of thermal is crucial for designing reliable gallium nitride high electron mobility transistors (GaN HEMTs). Thermal analysis models that assume a uniform heat source negle...

Highly accurate classification of material types from spectroscopic ellipsometry heatmap measurements using deep learning

Masahiro Hayashi, James N. Hilfiker, Takuji Maekawa et al. Nov 03, 2025 10.1063/5.0303070

Artificial intelligence (AI) applied to spectroscopic ellipsometry (SE) opens further possibilities for rapid and reliable optical metrology. Here, we present a deep learning model based on a convolut...

Angular-dependent ferromagnetic resonance of exfoliated yttrium iron garnet film under stress

Yufeng Wang, Peng Zhou, Shuai Liu et al. Nov 03, 2025 10.1063/5.0275303

Yttrium iron garnet (Y3Fe5O12, YIG) plays a significant role in the field of spintronics due to its low magnetic damping and insulating characteristics. However, most studies have focused on YIG in bu...

Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing

Tomoya Okuda, Shunsuke Ota, Kouei Kubota et al. Nov 03, 2025 10.1063/5.0294172

ScAlN has attracted considerable attention as a promising barrier material in GaN-based high-electron-mobility transistors. However, few studies have been conducted on the effect of thermal annealing...

Regulating membrane ion clusters to alleviate ammonia crossover in thermally regenerative batteries

Si Li, Yongjiu Tang, Yichao An et al. Nov 03, 2025 10.1063/5.0289268

In all-aqueous thermally regenerative ammonia battery (ATRB), ammonia crossover from anolyte to catholyte causes self-discharge, resulting in capacity decay. Based on the transport mechanism of small...

Red photoluminescence from Mn-doped <b> <i>β</i> </b> -Ga2O3: Optical signature of an Mn3 <b>+</b> ion?

M. Jansson, B. L. Dutton, John S. McCloy et al. Nov 03, 2025 10.1063/5.0304085

A sharp photoluminescence (PL) line at ∼710 nm, commonly present in Mn-doped β-Ga2O3, has previously been attributed to an intra-center transition of an Mn4+ ion with the d3 electronic configuration,...

Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers

Danae Katrisioti, Peter R. Wiecha, Aurélien Cuche et al. Nov 03, 2025 10.1063/5.0284138

Silicon-based dielectric nanoantennas provide an effective platform for engineering light–matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolaye...

Microwave permittivity and loss in epitaxial SrTiO3

Kamal Brahim, Andries Boelen, Anja Ulrich et al. Nov 03, 2025 10.1063/5.0265424

Materials that feature very high permittivity and very low losses at low temperatures offer interesting opportunities for improving the performance of a variety of microwave-optical devices such as ph...

Low-current transport through dopant atom-based quantum dots in a nanoscale silicon transistor

Kai-Lin Chu, Wenkun He, Jun Hwan Kim et al. Nov 03, 2025 10.1063/5.0293627

Quantum dot (QD) single-electron transistors, using phosphorous dopant atom QDs with radii as small as ∼1.2 nm, are electrically characterized down to the ∼100 fA level and over a wide temperature ran...

Microwave field imaging inside an atomic cell by fluorescence thermography

D. Prost, A. Bonnin, S. Schwartz Nov 03, 2025 10.1063/5.0293816

Rydberg atom-based electromagnetic field sensors are currently the focus of intense research efforts, promising high sensitivity, tunability, and compactness with SI-traceable measurements. However, t...

Probing ferroelectric switching via spatially averaged hysteresis loops in rough thin films

Chenyue Hu, Xavier Henning, Laurent Schlur et al. Nov 03, 2025 10.1063/5.0288888

Accurate characterization of polarization switching in ferroelectric thin films is critical for their effective integration into functional devices. Among the key parameters used to evaluate the polar...

Measurement of the orbital Hall effect in Cu and Al by optically probed spin-torque- and microwave-ferromagnetic resonance

Yoav Ben Tal, Nadav Am-Shalom, Nirel Bernstein et al. Nov 03, 2025 10.1063/5.0293680

Orbital currents are useful for transferring angular momentum in solid-state devices. Recently, the orbital Hall effect (OHE) was reported in pure Cu and Al, which are two technologically attractive m...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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