Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers

D Danae Katrisioti (Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,) P Peter R. Wiecha (LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,) A Aurélien Cuche (CEMES-CNRS, Université de Toulouse 4 , Toulouse,) S Sotiris Psilodimitrakopoulos G Guilhem Larrieu (LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,) J Jonas Müller V Vincent Larrey (CEA-LETI, Université Grenoble-Alpes 5 , Grenoble,) B Bernhard Urbaszek X Xavier Marie (Université de Toulouse, INSA-CNRS-UPS, LPCNO 7 , 135 Avenue Rangueil, 31077 Toulouse,) E Emmanuel Stratakis G George Kioseoglou (Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,) V Vincent Paillard (CEMES-CNRS, Université de Toulouse 4 , Toulouse,) J Jean-Marie Poumirol I Ioannis Paradisanos (Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,)

Abstract

Silicon-based dielectric nanoantennas provide an effective platform for engineering light–matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a threefold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to eightfold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.

Article Details

Volume / Issue Vol. 127, Issue 18
Published November 03, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

D

Danae Katrisioti

Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,

P

Peter R. Wiecha

LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,

A

Aurélien Cuche

CEMES-CNRS, Université de Toulouse 4 , Toulouse,

S

Sotiris Psilodimitrakopoulos

G

Guilhem Larrieu

LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,

J

Jonas Müller

V

Vincent Larrey

CEA-LETI, Université Grenoble-Alpes 5 , Grenoble,

B

Bernhard Urbaszek

X

Xavier Marie

Université de Toulouse, INSA-CNRS-UPS, LPCNO 7 , 135 Avenue Rangueil, 31077 Toulouse,

E

Emmanuel Stratakis

G

George Kioseoglou

Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,

V

Vincent Paillard

CEMES-CNRS, Université de Toulouse 4 , Toulouse,

J

Jean-Marie Poumirol

I

Ioannis Paradisanos

Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,