Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Abstract
Silicon-based dielectric nanoantennas provide an effective platform for engineering light–matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupling between monolayer MoS2 and silicon nanoantennas arranged in hexagonal lattices with tunable geometric parameters, leading to a threefold enhancement in photoluminescence and an excitation-wavelength-dependent emission that aligns with Mie-resonant modes. Raman spectroscopy reveals an up to eightfold enhancement in the vibrational modes of MoS2, while second-harmonic generation exhibits a 20 to 30-fold increase in efficiency, closely correlating with the presence of the underlying nanoantennas. Our experiments and simulations quantify the tunable benefits of the near-field interactions, taking into account thin-film interference and strain-induced effects. Our findings present dielectric nanoantennas as a promising platform for tailoring linear and nonlinear optical properties in 2D materials, with potential applications in nanophotonic devices and integrated photonics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Danae Katrisioti
Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,
Peter R. Wiecha
LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,
Aurélien Cuche
CEMES-CNRS, Université de Toulouse 4 , Toulouse,
Sotiris Psilodimitrakopoulos
Guilhem Larrieu
LAAS-CNRS, Université de Toulouse 3 , 31000 Toulouse,
Jonas Müller
Vincent Larrey
CEA-LETI, Université Grenoble-Alpes 5 , Grenoble,
Bernhard Urbaszek
Xavier Marie
Université de Toulouse, INSA-CNRS-UPS, LPCNO 7 , 135 Avenue Rangueil, 31077 Toulouse,
Emmanuel Stratakis
George Kioseoglou
Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,
Vincent Paillard
CEMES-CNRS, Université de Toulouse 4 , Toulouse,
Jean-Marie Poumirol
Ioannis Paradisanos
Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas 1 , Heraklion, 71110 Crete,