Applied Physics Letters
Articles in this Issue
Atomic-scale mechanisms of stress-controlled nanocrystal nucleation in amorphous alloys
Stress annealing offers a powerful route to control nanocrystallization in amorphous alloys, yet the atomic-scale mechanisms remain poorly understood. Here, we reveal that tensile stress significantly...
Spin-dependent transport in altermagnet CrSb-based magnetic tunnel junction
Altermagnetism, an emerging magnetic order state that combines the spin polarization of ferromagnets with the antiferromagnetic resistance to magnetic perturbations, provides a new route to overcome t...
In2O3 gap states in amorphous and poly-crystalline phases: Band tail and defect level characterization by subgap photocurrent spectroscopy
A nanometer-thick indium oxide (In2O3) layer is studied in terms of gap states, by means of subgap photocurrent spectroscopy. The In2O3 layer is prepared by atomic layer deposition, where its nanostru...
Effect of DC curing magnetic field on the magnetoelectric performance of Metglas/PZT bilayer composites
In this work, we modulate the performance of magnetoelectric (ME) composites by introducing residual stresses during their preparation. During the bonding and curing of magnetostrictive and piezoelect...
Perspectives on magneto-optical microscopy techniques
Magneto-optical microscopy is an exceptionally versatile imaging technique for probing magnetic microstructures in various magnetic materials. The magnetic imaging technique enables the study of magne...
Fluorescence enabled Raman amplification using photonic crystal resonant modes
Although plasmonic and photonic crystal substrates represent fertile ground for plasmon-enhanced fluorescence, Raman scattering, and surface-enhanced Raman scattering based diagnostic tool development...
Guided mode slot resonators
We propose and demonstrate an optical structure described as a guided mode slot resonator, which provides the strong resonant response of high contrast gratings, while at the same time concentrating t...
Tunability unraveled for elastic properties of cubic silicon carbide thin film compound semiconductor
Elastic properties, Young's modulus, and Poisson's ratio become highly tunable with the change from bulk material to thin films, presenting distinct advantages for micro- and nanofabrication. Here, we...
What is the efficiency limit of a single-junction silicon solar cell?
Silicon solar cells have an indirect bandgap, and so radiative recombination is an inefficient process. As such, their maximum power conversion efficiency is assumed to be less than the Shockley–Queis...
Ultraprecise anisotropy mapping of Young's modulus in single-crystal diamond via mechanical resonance
The exceptional stiffness of diamond is strongly anisotropic due to its crystal structure, yet experimental quantification of Young's modulus along different orientations remains limited. Here, we pre...
Vicinal substrate induced field-free spin–orbit torque switching and tunability of the Dzyaloshinskii–Moriya interaction in the CoPt layer
Spin–orbit torque (SOT)-induced magnetization switching is a key ingredient for electrically controlled spintronic devices. Crystal engineering offers an effective approach to tailor and optimize SOT...
Kinetic and electronic properties of surface steps on 4H-SiC epitaxial layers
Step-flow growth is critical to stabilizing the 4H polymorph, reducing defect density, and preserving a smooth surface during the homoepitaxy of 4H silicon carbide (4H-SiC). In this work, the step kin...
Demonstration of direct-amplification enabled harmonic generation in an ultraviolet free-electron laser
We report the experimental demonstration of direct-amplification enabled harmonic generation in an ultraviolet free-electron laser (FEL) driven by a low-intensity seed laser. By employing a versatile...
Atomically controlled ultrathin 2H-VS2: A promising candidate for n-channel FET
Two-dimensional transition metal dichalcogenides (2D-TMDs) have emerged as highly promising materials for next-generation ultrathin, flexible, and transparent electronic devices. Among the various mem...
Single-event burnout mechanism in <b>β</b> -Ga2O3 Schottky barrier diodes
In this work, the single-event burnout (SEB) mechanism of β-Ga2O3 SBD is systematically investigated. The irradiation experiment was performed based on Kr ions with a high linear energy transfer of 37...
Three-dimensional imaging of CMOS image sensor pixel structures using ptychographic x-ray computed tomography in the tender x-ray regime
Nondestructive three-dimensional imaging of nanoscale features in advanced semiconductor devices is crucial for understanding and improving their performance. In this study, we applied ptychographic x...
2 kV <b> <i>β</i> </b> -Ga2O3 Schottky diode with HfO2/SiO2 dual-layer field plate and mesa termination
In this Letter, a vertical β-Ga2O3 Schottky barrier diode (SBD) featuring a composite termination structure with dual-layer field plate and self-aligned etched mesa (DFPM-SBD) is proposed. By combinin...
Field-free magnetization switching of synthetic antiferromagnets magnetic tunnel junction induced by spatially gradient spin texture
Synthetic antiferromagnets (SAFs) offer a promising pathway for the scaling of magnetic random access memory (MRAM) by eliminating stray fields; however, their practical potential is limited by the re...
Excited-state properties of TCTA:PO-T2T exciplex in solvents investigated by density function theory and transient absorption spectroscopy
The solvent-dependent excited-state properties of TCTA:PO-T2T mixture are investigated through a combination of quantum chemical calculations with ultrafast transient absorption spectroscopy. Photolum...
Ultralow dark-current self-powered VS2/SiO2/Si MIS photodiode for highly sensitive broadband detection
Widely used silicon (Si)-based optoelectronic components based on PN or Schottky junctions face issues such as high noise levels and poor weak-light detection capabilities. Herein, we present a high-p...
Optimal growth conditions for strained GaAs/InxAl1−xAs core–shell nanowires with enhanced electronic properties
In material systems such as GaAs core/InxAl1−xAs shell nanowires, the elastic strain and the resulting electronic properties of the core can be continuously tailored via the selection of the ternary s...
Adjustable entanglement enhancement via approaching to higher-order exceptional points in non-Hermitian network system
We propose an enhanced entanglement generation scheme in the non-Hermitian system by introducing an ancillary qubit with adjustable driven field to control the target entanglement, making this model m...
Strain-mediated magnetoelectrics for microfluidic applications: Current status and future perspectives
The integration of magnetoelectric (ME) materials into microfluidic systems represents a significant advancement, offering enhanced precision and energy efficiency in manipulating magnetic entities at...
Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices
Nano-light-emitting diodes (NLEDs) have attracted considerable attention due to their unique advantages and significant potential for emerging near-eye display technologies. Nevertheless, progress in...
Distinguishing charge transfer and lattice heat impacts on the ultrafast demagnetization in antiferromagnetic CoO films
The time-resolved magneto-optical (MO) Voigt effect is utilized to study the ultrafast quenching and recovery process of antiferromagnetic (AFM) spin order of CoO films. The impacts of charge transfer...