Applied Physics Letters
Articles in this Issue
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
We deposited a highly oriented MoS2 film on a 2-in. α-Al2O3 (0001) wafer by metalorganic chemical vapor deposition and determined the atomic configuration of the MoS2/α-Al2O3 (0001) stacking structure...
Compound semiconductor direct wafer bonding by crystal heterogeneous integration
Crystal heterogeneous integration (CHI) is a technique that enables the direct (semiconductor-to-semiconductor) fusion of high-quality interfaces between both homogeneous and heterogeneous compound se...
Disorder-induced electron localization and electronic states coupling in nitride semiconductors
The electronic states of surface oxidized nitride semiconductors (GaN, AlGaN, and AlN) are investigated by valence electron energy-loss spectroscopy. It is shown that the loss of long-range atomic ord...
Ferroelectric-gated highly sensitive InGaAs nanowire near-infrared photodetectors
InGaAs nanowires (NWs) show exceptional potential in near-infrared photodetection due to their excellent optoelectronic properties. However, the high intrinsic carrier concentration of the InGaAs NW a...
Distinguishing DNA topological forms with terahertz metamaterial spectroscopy
The topological conformation of DNA is a critical determinant of its biological function, but distinguishing between different isoforms, such as circular and linear, remains challenging. This study de...
Electrically tunable Si-based three-color light-emitting diode
We demonstrate a three-color tunable light-emitting diode in the near-infrared region based on a pseudomorphic Si1−xGex/Si triple quantum well. The emission color is tuned by controlling real space tr...
Submicrometer tunnel ferromagnetic Josephson junctions with transmon energy scale
We have realized submicron tunnel ferromagnetic Al/AlOx/Al/Ni80Fe20/Al Josephson junctions (JJs) in Manhattan-style configuration for qubit applications. These junctions have been designed to lie with...
High-order symmetric mode of aluminum nitride-based Lamb wave resonator realizing high-sensitivity strain sensing
Surface acoustic wave resonators have been widely developed for strain detection due to their advantages of miniaturization, portability, potential to be integrated with microelectronics, and passive/...
Stress tunable multiferroic magnetic circuit: The magnetic rheostat
This work presents the development of a magnetic rheostat, a dynamically tunable magnetic circuit element analogous to a variable resistor, leveraging the stress-dependent permeability of magnetostric...
Enhancing stability and high voltage tolerance of P2-type layered Na0.70Ni0.25Mn0.75O2 cathodes via Cu/Mg dual-doping for Na-ion batteries
P2-type Na0.70Ni0.25Mn0.75O2 layered cathode materials exhibit high theoretical capacity and operating voltage but suffer from capacity decay at high voltages, Na+/vacancy ordering, charge compensatio...
Enhanced breakdown voltage in <b>β</b> -Ga2O3 Schottky diodes via fast neutron irradiation and electro-thermal annealing
This study demonstrates a substantial enhancement of breakdown voltage in β-Ga2O3 Schottky barrier diodes through an approach that combines fast neutron irradiation with controlled post-irradiation el...
Fermi level tunableness of graphene for nonreciprocal emitter with magneto-optical material InAs
Nonreciprocal thermal radiation is a developing area of research that involves integrating anisotropic magneto-optical materials into optical systems. Most current investigations concentrate on the ph...
Stranski–Krastanov growth of disordered ScNx thin films on MgO(100): Influence of defect densities on electronic structure and transport properties
We report a real-time Stranski–Krastanov growth of reactively sputtered ScNx thin films on MgO(100). The epitaxial growth was limited to 5 nm at a substrate temperature (Ts) of ∼25 °C, while the self-...
Controlled synthesis of large-area monolayer Janus MoSSe nanostructures based on interface strain-induced strategy
Janus transition metal dichalcogenides (TMDCs) exhibit exceptional potential for advancing applications in the fields of optoelectronics, spintronics, and valleytronics, owing to their broken structur...
Impedance-engineered Josephson parametric amplifier with single-step lithography
We present an experimental demonstration of an impedance-engineered Josephson parametric amplifier (IEJPA) fabricated in a single-step lithography process. Impedance-engineering is implemented using a...
Healing the buried interface with versatile glutamic acid for efficient and stable SnO2-based perovskite solar cells
Effectively suppressing defects at the SnO2/perovskite (PVK) interface is critical for high-performance perovskite solar cells (PSCs). Here, we introduce glutamic acid (Glu) into SnO2, achieving syner...
Thermal and microwave performance enhancement of AlGaN/GaN HEMT using an ultra-thin buffer on Si substrate for handset applications
Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are promising for handset applications. However, the self-heating effect significantly degrades the RF performance and reliability, mak...
RuO2@MoO <i>x</i> heterostructure for high-performance and quasi-solid-state biodegradable supercapacitor
With the rapid development of wearable electronics and implantable medical devices, energy storage systems combining high-performance and biodegradability have attracted increasing attention. In this...
Investigation of surface charging characteristics of ion-irradiated alumina ceramics: Transition from secondary electron emission to charge injection
Abnormal electrical breakdowns have been observed in the grid system of ion thrusters during both ground tests and space missions, leading to severe discharge-induced damage. Alumina ceramic, commonly...
UV light-induced graphene/GaN heterojunction photomemory devices with negative photocurrent
Synaptic devices inspired by biological systems have the potential to overcome the limitations of traditional computers based on von Neumann architecture. There have been attempts to use GaN as a syna...