Compound semiconductor direct wafer bonding by crystal heterogeneous integration
Abstract
Crystal heterogeneous integration (CHI) is a technique that enables the direct (semiconductor-to-semiconductor) fusion of high-quality interfaces between both homogeneous and heterogeneous compound semiconductor materials without interposing adhesion layers. Uniquely, CHI enables the integration of hydride and metalorganic sources into the bonding ambient with the ability to independently control wafer contact, force, and temperature in the bonding process, providing the capability to overcome challenging materials integration issues for a wide range of compound semiconductors. We demonstrate the advantages of CHI for direct bonding GaN with both native GaN substrates and GaN films on heterogeneous substrates (Al2O3 and Si).
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Keith Markham
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Justin F. Melkun
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Mohammad Rabbani
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Chris R. Winkler
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Brian Little
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Dennis C. DeFevere
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Dave A. Vanderwater
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,
Fred Kish
Department of Electrical and Computer Engineering, North Carolina State University , Raleigh, North Carolina 27606,