Applied Physics Letters
Articles in this Issue
High-resolution GaN p-i-n alpha-particle detector with thick i-GaN layer
Alpha-particle detectors face several fundamental challenges, including the difficulty in achieving thick, high-quality depletion regions essential for efficient charge collection, high leakage curren...
Strain-induced multifunctional altermagnetism in a Janus material
Altermagnetism, an emerging magnetic phase exhibiting spin-polarized electronic bands and zero net magnetization, has attracted significant attention for next-generation spintronics. However, experime...
600 °C operation of MBE-enabled ScAlN/AlN/GaN FinHEMTs
We report Sc0.15Al0.85N/AlN/GaN fin high-electron-mobility transistors (FinHEMTs) with stable operation up to 600 °C, enabled by a nearly lattice-matched Sc0.15Al0.85N barrier grown by molecular beam...
Determination of intrinsic thermal expansion coefficient of VO2 film via interface engineering
The strong coupling between thermal and epitaxial strain in as-grown vanadium dioxide (VO2) thin films obscures the underlying physical mechanisms and impedes precise device control. Here, we circumve...
Delta-doped diamond via <i>in situ</i> plasma-distance control
We present an approach to CVD diamond growth, in which the sample is placed at a defined distance from the reactor baseplate, to which the plasma couples. We observe two previously unknown growth regi...
Metal-modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices
Scandium aluminum nitride (ScxAl1−xN) is attractive for novel quantum photonic applications due to the prospect of growing arbitrarily thick low-defect ScxAl1−xN/GaN heterostructures on c-plane GaN. W...
Design of finite impulse response filter based on single-layer CoPt spin–orbit torque devices
Signal processing often suffers from high energy consumption and limited speed due to the separation of data storage and computation in conventional electronic systems. To harness the full potential o...
Engineering stable conductive filament formation in MoS2 resistive random access memory via process-controlled metal incorporation into defects for enhanced electrochemical metallization switching
The fabrication and optimization of molybdenum disulfide (MoS2) resistive random access memory (RRAM) are investigated to achieve stable and reliable resistive switching. To control the inherently ran...
A high-performance room-temperature hydrogen sensor based on Pd nanoparticle-decorated β-Ga2O3 prepared by mist-CVD
Hydrogen is a promising clean energy carrier, but its high flammability demands reliable sensing at room temperature with low power consumption. Here, we demonstrate a room-temperature hydrogen sensor...
A viscoelastic oxyhalide catholyte for 4.5 V all-solid-state batteries under low stack pressures
Deployment of all-solid-state lithium batteries is hindered by high stack pressure (&gt;200 MPa) and interfacial chemo-mechanical instability. Herein, we propose a moderate-temperature (180 °C) si...
Precise control of launch velocity vector for cold atomic cloud based on moving optical molasses
We propose a method for precise control of the launch velocity vector of a cold atomic cloud. By independently adjusting the relative detuning of three pairs of orthogonal counter-propagating laser be...
A conductive epitaxial underlayer for voltage control in magnetic garnet heterostructures
Magnetic iron garnets hold great interest for magnonic, spintronic, and magnetooptical devices, but utilizing voltage-driven phenomena in insulating garnets has been prevented by the lack of a conduct...
Ferromagnetic insulating ground states in oxygen deficient La0.8Sr0.2CoO3 <b> − <i>δ</i> </b> films induced by ionic liquid gating
Ferromagnetic (FM) insulators are regarded as promising candidates for next-generation electronic and spintronic devices due to their low power consumption and high processing efficiency. However, ach...
Thermal stability and phase transformation of conductive α-(AlxGa1−x)2O3/Ga2O3 heterostructure on sapphire substrates
Thermal stability and phase transformation of conductive α-(Al0.16Ga0.84)2O3/Ga2O3 heterostructure on sapphire substrates were investigated via in situ high temperature x-ray diffraction, scanning ele...
First-principles prediction of altermagnetic topological insulators in the hydrogenated Ti2X2O (X = As, Sb) monolayers
Altermagnetism, a distinct magnetic phase beyond traditional ferromagnetism and antiferromagnetism, offers a promising platform for realizing novel topological quantum states. Utilizing first-principl...
Achieving high spin–orbit torque efficiency and robust thermal stability in the sputter-grown topological bilayer BiSb/Pt
Topological insulators (TIs) have emerged as promising candidates for spin–orbit torque (SOT) devices, owing to their high charge-to-spin conversion efficiency. However, integrating TIs, such as polyc...
Controlling the optical-feedback-instability of VCSELs through inter-mesa coupling
The rapid advancement of artificial intelligence and cloud computing has led to a strong demand for high-speed vertical-cavity surface-emitting lasers (VCSELs). Omitting the optical isolator in short-...
Evaluation of Si thin film formed from Si0.7Ge0.3/Si/Si0.7Ge0.3-stacked layers with CF4/H2 plasma for Si-nanosheet formation toward GAA transistor application
We investigated the influence of selective SiGe etching process condition using CF4/H2 plasma on defect formation in the Si layer. Total photoelectron yield spectroscopy and conductive-atomic force mi...
Low-loss Nb on Si superconducting resonators from a dual-use spintronics deposition chamber and with acid-free post-processing
Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for ma...
Oxygen reduction for p-type TeOx thin-film transistor
We investigated p-type TeOx thin films fabricated by vacuum deposition using a mixture of TeO2 powder and W powder in Al2O3 crucibles and evaluated its thin-film transistor (TFT) characteristics. P-ty...
High-performance narrowband cavity organic photodetectors enabled by a polystyrene doping strategy
Conventional cavity-enhanced organic photodetectors (OPDs) often suffer from broad spectral response due to the high absorption coefficient of the organic active layer, which compromises cavity select...
Quantum storage of frequency-multiplexed photons exhibiting nonclassical correlations with telecom C-band photons
Multiplexing is essential for improving entanglement distribution rates in quantum communication. Frequency multiplexing provides a promising and scalable path toward large-capacity quantum networks....
Trap dynamics in the carbon-doped GaN buffer of AlGaN/GaN HEMTs through back-gate bias and sub-bandgap illumination
The dynamic interactions among multiple trap states in the carbon-doped (C-doped) GaN buffer of AlGaN/GaN high-electron-mobility transistors have been studied and quantitatively characterized through...
Magnetoelectric coupling and structural phase transition in MnTiO3 single crystal
This work presents a systematic investigation of magnetoelectric (ME) coupling in high-quality MnTiO3 single crystals, a prototypical geometrically frustrated antiferromagnet. X-ray diffraction confir...
Visualization of laser-driven phase transition in few-layer MoTe2
Phase transition between different polymorphs of two-dimensional (2D) transition metal dichalcogenides is of great interest for the development of nanoelectronics and optoelectronics. Here, we report...