Applied Physics Letters
Articles in this Issue
Enhanced thermoelectric performance and observation of WAL effect in Se-substituted BiSbTe3 single crystals
Bi–Sb–Te-based materials are benchmark thermoelectrics for room temperature applications owing to their optimal electronic band structure that yields a large value of thermopower (S ∼ 300 μV/K), ultra...
Investigative study of Mg in GaN and AlN with density functional theory
The relatively high activation energy of the Mg acceptor in GaN and AlN is one factor that limits free hole concentrations in Mg-doped GaN, AlN, and AlGaN. Impurity band conduction has been observed a...
High-performance uncooled mid-infrared lead salt photodetectors: Revealing surface passivation and charge transport mechanisms
Uncooled mid-infrared lead-salt photodetectors are considered promising candidates for next-generation infrared optoelectronic devices that meet the small size, low weight, high performance, low power...
Multifunctional nonlinear planar device of cavity magnonics based on a 100 nm-thick YIG film
The paper demonstrates a multifunctional nonlinear planar cavity magnonic device based on a coupled photon–magnon system “half-wave microstrip resonator–superthin (100 nm thick) yttrium iron garnet (Y...
Radially accelerating and autofocusing caustics in electron vortex beams
Electron vortex beams (EVBs) carrying quantized orbital angular momentum significantly enhance the quantum state encoding and phase modulation capabilities of free electrons. However, conventional EVB...
Local constrained expansion induced surface tensile strain and optical enhancement in suspended GeSn microstructures
Strain engineering is a key strategy for advancing GeSn in silicon optoelectronics, as it not only overcomes the compressive strain in epitaxial films but can also introduce additional tensile strain...
First-principles investigation of threshold displacement energies of MAPbBr3
Optoelectronic devices based on lead halide perovskite (LHP) materials show superior tolerance to high-energy ionizing radiation compared with conventional semiconductor materials, but the physical or...
Achieving uniform elemental distribution and high crystallinity in Cu3V(S,Se)4 solar cells via optimizing selenization engineering
The selenization parameters for solution-based Cu3V(S,Se)4 thin film solar cells were systematically studied. An increasing selenization temperature can help Cu, S, and Se elements diffuse effectively...
Li/Ni disordering modulated resistive switching behavior in LiNiO2
With the rapid development of computing technology, two-terminal memristors with controllable resistance have attracted considerable attention due to their simple structure and ease of integration. Th...
A perspective on the electronic instabilities in kagome AV3Sb5
The electronic properties of solids are strongly shaped by lattice geometry. A prime example is the kagome lattice, whose band structure features van Hove singularities (vHS), flat bands, and Dirac cr...