Applied Physics Letters

Vol. 128, Issue 23 Issue 23 2026
55
Articles

Articles in this Issue

Spin-wave phase modulation using magnetic domain walls in dipolarly coupled structures for non-volatile magnonic computation

H. Mortada, P. Pirro, A. Hamadeh Jun 08, 2026 10.1063/5.0332732

A controllable phase shifter is a key component for spin-wave–based logic and information-processing devices. Here, we propose a domain-wall-position–controlled spin-wave phase shifter that exploits d...

Low-temperature growth of two-dimensional InP nanosheets for optoelectronic applications

Ziren Xiong, Yao Wen, Hui Zeng et al. Jun 08, 2026 10.1063/5.0324696

Two-dimensional (2D) III–V semiconductors hold exceptional promise for next-generation electronic and optoelectronic devices; however, their scalable synthesis remains a long-standing challenge owing...

Development of a uniform microwave-induced low-temperature plasma jet array at atmospheric pressure

Jun Wang, Nana Zhang, Daming Fan et al. Jun 08, 2026 10.1063/5.0332475

This paper presents the design of a low-temperature microwave atmospheric-pressure plasma jet array operating at 2.45 GHz, based on a power divider and coaxial transmission-line structures. To expand...

Time-resolved interferometric measurements of plasma density evolution in laser-driven capacitor-coil targets

Yang Zhang, Ryo Omura, Rinya Akematsu et al. Jun 08, 2026 10.1063/5.0325266

Laser-driven capacitor-coil targets provide a compact platform for generating strong magnetic fields and are widely used in magnetized high-energy-density (HED) plasma experiments. In addition to magn...

Knitting mechanism of skyrmions from interfacial magnetic anisotropies in γ-FeMn/Co bilayer films

Xiaolin Li, Ping Ma, Long Cheng et al. Jun 08, 2026 10.1063/5.0335676

Interfacial skyrmions, which hold great promise for applications among various types of skyrmions, typically form through interfacial Dzyaloshinskii–Moriya interactions (DMI) induced by heavy metal la...

Enhanced piezoelectric performance of textured ceramics based on AC polarization technology for ultrasonic transducer

Jinpeng Ma, Yuan Sun, Yulin Yang et al. Jun 08, 2026 10.1063/5.0335394

Piezoelectric materials serve as the core component of ultrasonic transducers, where advancing system capabilities necessitates continuously improved performance. To this end, alternating current pola...

Effect of gas exposure on GaN surface quantum wells

B. J. Sekely, C. T. Kuhs, H. Xue et al. Jun 08, 2026 10.1063/5.0332186

Some HEMT transistors and a variety of gas, pH, and molecular sensors use thin GaN capping layers that behave as surface quantum wells (SuQWs), such as those formed by a thin GaN layer with vacuum or...

Hierarchical spectral inhomogeneity in photoluminescence of a twisted MoSe2/WSe2 heterobilayer moiré superlattice revealed by hyperspectral mapping

Nurul Fariha Ahmad, Yuto Urano, Kenji Watanabe et al. Jun 08, 2026 10.1063/5.0335306

Low-temperature photoluminescence from a MoSe2/WSe2 moiré superlattice often consists of a broad interlayer emission background with dense, narrow peaks, making microscopic line-by-line assignment dif...

All-optical switching in CoFeB-based artificial ferrimagnets

S. Li, T. Ueno, R. Takahashi et al. Jun 08, 2026 10.1063/5.0328535

We demonstrate deterministic all-optical switching (AOS) triggered by single femtosecond laser pulses in CoFeB-based artificial ferrimagnets consisting of Co/Gd/CoFeB trilayers. We show that AOS in th...

Turning etching by-products into active sites: <i>In situ</i> construction of MoB/ZnS heterostructures for high-rate sodium-ion capacitors

Jiang Liu, Shulin Yang, Tingting Zou et al. Jun 08, 2026 10.1063/5.0334225

High-performance sodium-ion capacitor anodes require the simultaneous achievement of rapid kinetics and structural robustness. However, conventional MBene synthesis involves the wasteful removal of me...

Electrically controlled tuning the nonlinearity and asymmetry of synaptic behaviors in a magnetoelectrically coupled memristor for high-performance neuromorphic computing

Mingmin Zhu, Ankang Huang, Xin Wang et al. Jun 08, 2026 10.1063/5.0315640

High-performance artificial synaptic devices capable of emulating biological synaptic functions are crucial for developing energy-efficient neuromorphic computing systems. Memristors, whose conductanc...

Observation of bandgap narrowing in <i>p</i> -type doped GeSn alloys

Caile Wang, Yue Li, Junyu Chang et al. Jun 08, 2026 10.1063/5.0332368

A series of p-type doped GeSn samples has been epitaxially grown by the ultra-high vacuum chemical vapor deposition method, and direct bandgap narrowing (BGN) is observed through photoluminescence and...

Composition-driven tunable optical and electrical properties in van der Waals ferroelectric NbOI2− <i>x</i> Cl <i>x</i> alloys

Gaolei Zhao, Juhe Liu, Jinkai Huo et al. Jun 08, 2026 10.1063/5.0340636

Layered niobium oxide dihalides NbOX2 (X = I, Cl), as a new family of van der Waals (vdW) ferroelectrics, have attracted extensive attention, but achieving nonvolatile modulation of their optical and...

Laser-engineered oxygen-vacancy-rich CeO2/graphene heterostructures for high-performance planar micro-supercapacitors

Hailong Shen, Jianghai Li, Jiaheng Xu et al. Jun 08, 2026 10.1063/5.0321184

The planar miniature supercapacitors (PMSCs) based on laser-induced graphene (LIG) are promising miniaturized energy storage systems, yet their practical deployment is constrained by low areal capacit...

Asymmetric gate modulation induced by device geometry in dual-gated WSe2 and WS2 transistors

Jae Joon Kim, Soobong Choi, Byoung Hee Moon Jun 08, 2026 10.1063/5.0322626

Two-dimensional (2D) transition metal dichalcogenides have enabled new opportunities for exploring electrostatic control and contact engineering in atomically thin semiconductors. Here, we study dual-...

Revisiting single-point-source localization in Compton cameras through detector-level statistical cues revealed by ComptonNet analysis

S. Sato, K. S. Tanaka, K. Murasaki et al. Jun 08, 2026 10.1063/5.0326605

Compton cameras are widely used for gamma-ray imaging owing to their high sensitivity, wide field of view, and broad energy coverage. Recent deep-learning models, such as ComptonNet, have demonstrated...

Enhancement of mid-infrared electroluminescence in black phosphorus with an electron blocking layer

Bolin Gong, Xiangxi Zhu, Maoxin Tian et al. Jun 08, 2026 10.1063/5.0325488

Black phosphorus (BP) has been demonstrated to have a high light-emitting efficiency in the mid-infrared regime due to its direct bandgap and suppressed Auger recombination effect. Optimization of dev...

Effects of electrode geometry and sub-bandgap excitation in <b> <i>β</i> </b> -Ga2O3 photoconductive semiconductor switches

Vikash Jangir, Sourojit K. Mazumder, Sudip K. Mazumder Jun 08, 2026 10.1063/5.0316859

This work reports enhanced photoconductive switching performance in Fe-doped β-Ga2O3 PCSS by concurrently optimizing electrode geometry and the optical excitation wavelength. By systematically varying...

Two-dimensional monolayer CuXSe2 (X  <b>=</b>  Cl, Br) as a potential medium-temperature thermoelectric material

Shuaibo Hao, Yuli Yan, Xinying Li et al. Jun 08, 2026 10.1063/5.0333017

Numerous two-dimensional materials show remarkable thermoelectric (TE) performances due to quantum confinement effects. However, identifying ideal TE materials with low thermal conductivity and high S...

Broadband and high-responsivity SiC-based hot-electron photodetector driven by TiN/SiN core-cap disk array

Ruiyun Zhao, Wenyan Wang, Peiyu Wang et al. Jun 08, 2026 10.1063/5.0327115

Silicon carbide (SiC) photodetectors are highly valued for their exceptional stability in harsh environments. However, their wide bandgap (∼3.3 eV) fundamentally constrains the spectral response, limi...

Anisotropic phonon response to electron irradiation in <b> <i>β</i> </b> -Ga2O3 single crystals revealed by temperature-dependent Raman spectroscopy

Bin Zhu, Taiqiao Liu, Dongsheng Li et al. Jun 08, 2026 10.1063/5.0336456

The β-phase of gallium oxide (β-Ga2O3) is an ultrawide bandgap semiconductor with excellent electrical properties and strong radiation tolerance, making it a promising candidate for electronic devices...

Higher-order topological phase in planar hexacoordinate X2Y monolayers (X = Cu, Ag, or Au; Y = Si, Ge, Sn, or Pb)

Ina Marie R. Verzola, Sreeparvathy P. C., Rovi Angelo B. Villaos et al. Jun 08, 2026 10.1063/5.0327059

Topological insulators (TIs) exhibit insulating bulk behavior with conducting boundary states protected by symmetry and spin–orbit coupling (SOC). Recently, the concept of higher-order topological ins...

Unraveling coupled electronic and lattice dynamics in germanium via SVD-assisted ultrafast ellipsometry

Shirly Espinoza, Jorge Ortega-Gallegos, Liliana Estela Guevara-Macías et al. Jun 08, 2026 10.1063/5.0320620

We demonstrate a Singular Value Decomposition (SVD)-based framework to disentangle overlapping electronic and lattice dynamics in germanium probed by femtosecond spectroscopic ellipsometry. The transi...

Modulation of magnon lifetime through magnon–magnon coupling

Yu Huang, Bo Hu, Qingjie Fang et al. Jun 08, 2026 10.1063/5.0328571

The dynamic control of magnon lifetime via magnon–magnon coupling (MMC) is crucial for spintronic applications, yet the underlying mechanisms governing the evolution of dynamical parameters during the...

Charge-transfer-induced ultrafast valley depolarization in WS2/GaSe van der Waals heterostructures

Hangxin Bai, Xiaofei Bian, Hui Yang et al. Jun 08, 2026 10.1063/5.0329863

The interfacial processes of two-dimensional van der Waals heterostructures (vdWHs) are of critical importance to their ultrafast carrier transfer dynamics and device performances as optoelectronic an...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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