Two-dimensional monolayer CuXSe2 (X  <b>=</b>  Cl, Br) as a potential medium-temperature thermoelectric material

S Shuaibo Hao (Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,) Y Yuli Yan (Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,) X Xinying Li X Xiaowei Xuan (Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,) R Ruonan Li (State Key Laboratory of Experimental Hematology, Tianjin, China) J Jingyuan Qi (Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,) S Shuaijie Wang G Guangbiao Zhang (Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,)

Abstract

Numerous two-dimensional materials show remarkable thermoelectric (TE) performances due to quantum confinement effects. However, identifying ideal TE materials with low thermal conductivity and high Seebeck coefficient is challenging because of their strong coupling and conflict. In this work, a novel monolayer semiconductor CuXSe2 (X = Cl, Br) with balanced TE performance is theoretically predicted using first-principles calculations and the Boltzmann transport equation. Phonon spectrum analysis, ab initio molecular dynamics simulations, and mechanical property assessments confirm CuXSe2's thermodynamic, dynamic, and mechanical stability. Studies show the ultralow lattice thermal conductivity of CuXSe2 monolayer at 300 K is 0.13 and 0.03 W/m K along the x axis, and 0.24 and 0.06 W/m K along the y axis, attributed to stronger phonon anharmonic property from weaker binding force. Low phonon group velocity and strong phonon scattering lead to its low room-temperature lattice thermal conductivity. Moreover, 2D CuBrSe2 has a high ZT of 2.36 at 500 K due to low lattice thermal conductivity and excellent electronic transport performance. This study identifies CuXSe2 as a new TE material for promising medium-temperature applications.

Article Details

Volume / Issue Vol. 128, Issue 23
Published June 08, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

S

Shuaibo Hao

Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,

Y

Yuli Yan

Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,

X

Xinying Li

X

Xiaowei Xuan

Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,

R

Ruonan Li

State Key Laboratory of Experimental Hematology, Tianjin, China

J

Jingyuan Qi

Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,

S

Shuaijie Wang

G

Guangbiao Zhang

Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,