All-optical switching in CoFeB-based artificial ferrimagnets

S S. Li T T. Ueno (Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology 1 , Takasaki 370-1292,) R R. Takahashi (Department of Material Science, Graduate School of Science, University of Hyogo 3 , Ako 678-1297,) H H. Wadati (Department of Material Science, Graduate School of Science, University of Hyogo 3 , Ako 678-1297,) M M. Ono (NTT Nanophotonics Center, NTT, Inc. 4 , Atsugi 243-0198,) M M. Notomi (NTT Nanophotonics Center, NTT, Inc. 4 , Atsugi 243-0198,) Y Y. Ohtsubo (NanoTerasu Center, National Institutes for Quantum Science and Technology 7 , Sendai 980-8579,) Y Y. Kotani (Japan Synchrotron Radiation Research Institute 8 , Sendai 980-8572,) P P. D. Bentley (Kansai Institute for Photon Science, National Institutes for Quantum Science and Technology 9 , Kizugawa 619-0215,) S S. Sakai

Abstract

We demonstrate deterministic all-optical switching (AOS) triggered by single femtosecond laser pulses in CoFeB-based artificial ferrimagnets consisting of Co/Gd/CoFeB trilayers. We show that AOS in this trilayer system is primarily governed by the energetics of nonequilibrium demagnetization, rather than by the magnetic anisotropy barrier in equilibrium. Unlike existing AOS multilayer systems in which CoFeB layers are coupled indirectly through a nonmagnetic layer, each layer in our system, including the CoFeB layer, is directly antiferromagnetically exchange-coupled by a strong interfacial proximity effect. This direct coupling enables a purely thermal toggle switching process across the entire stack, facilitating ultrafast optical writing. Moreover, these thin film structures are fully compatible with the high-magnetoresistance CoFeB/MgO/CoFeB tunnel junction architecture, making this system a promising building block for the development of all-optically driven magnetic tunnel junctions, which are a key component for future high-speed, low-power logic and memory applications.

Article Details

Volume / Issue Vol. 128, Issue 23
Published June 08, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

S

S. Li

T

T. Ueno

Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology 1 , Takasaki 370-1292,

R

R. Takahashi

Department of Material Science, Graduate School of Science, University of Hyogo 3 , Ako 678-1297,

H

H. Wadati

Department of Material Science, Graduate School of Science, University of Hyogo 3 , Ako 678-1297,

M

M. Ono

NTT Nanophotonics Center, NTT, Inc. 4 , Atsugi 243-0198,

M

M. Notomi

NTT Nanophotonics Center, NTT, Inc. 4 , Atsugi 243-0198,

Y

Y. Ohtsubo

NanoTerasu Center, National Institutes for Quantum Science and Technology 7 , Sendai 980-8579,

Y

Y. Kotani

Japan Synchrotron Radiation Research Institute 8 , Sendai 980-8572,

P

P. D. Bentley

Kansai Institute for Photon Science, National Institutes for Quantum Science and Technology 9 , Kizugawa 619-0215,

S

S. Sakai