Applied Physics Letters
Articles in this Issue
Meta-grating-based SERS sensor capable of efficiently trapping target molecules in hotspots
Although extensive past efforts were devoted to designing substrates exhibiting abundant hotspots for improving the detection sensitivity of surface-enhanced Raman spectroscopy (SERS), how to transpor...
Role of Mg hole traps in hole transport of p-GaN/UID-GaN/AlGaN/GaN heterostructure
This work reports on the dynamics of hole transport in a p-GaN/UID-GaN/AlGaN/GaN heterostructure investigated through temperature-dependent I–V characteristics. The pronounced temperature and bias dep...
Temperature dependence of spin-dependent recombination in a SiC power device
Spin-dependent recombination (SDR) in silicon carbide (SiC) devices provides a powerful route to probe defect physics and spin interactions directly within technologically relevant power electronics....
Interface defects as the origin of breakdown in ferroelectric TiN/HZO/TiN memory capacitors subjected to electrical stress
Alloyed Hf0.5Zr0.5O2 (HZO) ultrathin layers crystallized in a metastable non-centrosymmetric phase are the leading candidate for implementation of scaled ferroelectric devices due to their excellent C...
Temperature-dependent Raman scattering and x-ray diffraction studies of charge density wave order in PrSb2
The charge density wave (CDW) transition in the PrSb2 compound has been systematically investigated through variable-temperature Raman scattering, x-ray diffraction, and electrical resistivity measure...
Martensite-like ultrasonic signatures in Pd40Ni10Cu30P20 bulk metallic glass under repeated thermo-acoustic cycling
Martensite-like ultrasonic signatures are observed in the highly stable Pd40Ni10Cu30P20 bulk metallic glass during repeated thermo-acoustic cycling under extremely low strain amplitudes (∼10−8) at cry...
Gigahertz frequency mixing and multiplication in an all-van der Waals ambipolar MoTe2 transistor
Gigahertz frequency mixing and multiplication are demonstrated in ambipolar few-layer MoTe2 transistors based on all-van der Waals architecture. The devices combine few-layer MoTe2 channels with graph...
Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
The p-type doping of GaN using Mg ion implantation remains a critical challenge in the development of GaN power devices. Herein, we demonstrate that Mg clustering, induced by sequential N ion implanta...
Synergistic Cd and In co-doping enables high thermoelectric performance in <i>p</i> -type AgBiSe2
p-type AgBiSe2 thermoelectric materials have attracted considerable attention due to their intrinsically ultralow lattice thermal conductivity and favorable valence band characteristics. However, thei...
Comparison of Nb and Ta pentoxide loss tangents for superconducting quantum devices
Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single ph...
Efficient and anisotropic strain engineering in few-layer 3R-MoS2 via polymer encapsulation
Efficient strain transfer to few-layer two-dimensional materials remains challenging due to weak interfacial coupling. Here, we apply uniaxial tensile strain up to 4.3% to few-layer 3R-MoS2 using a po...
GaN-based blue micro-laser diodes for visible light communication
Visible light communication (VLC) is attracting growing interest for energy-efficient, high-bandwidth links for next-generation data centers. GaN-based blue edge-emitting micro-laser diodes (micro-LDs...
Full-color imaging diffractive lenses fabricated by two-photon lithography
Diffractive lenses allow bulky refractive optical elements to be replaced by compact solutions, making them essential for miniaturized optical systems. However, diffractive lenses suffer from strong c...
Deep-ultraviolet AlGaN laser diodes employing a low-resistivity n-type contact layer
We demonstrate deep-ultraviolet (UV) AlGaN laser diodes (LDs) employing a Si-doped compositionally graded AlGaN n-type contact layer. The introduction of this contact layer significantly improved the...
Unveiling asymmetric carrier dynamics and space-charge compensation in InGaN/GaN multiple quantum wells via capacitance transient spectroscopy
Carrier dynamics, particularly the transition between localized and delocalized states within quantum wells (QWs), are fundamental to the performance of InGaN/GaN optoelectronic devices. In this work,...
Tailoring imprint in ferroelectric thin films through substrate work function
The imprint effect, one of the most critical parameters in ferroelectrics, manifests as an asymmetry in polarization reversal. The precise control of imprint is essential for reliable implementations...
On-chip THz photonic receivers with built-in frequency selectivity
Miniaturized terahertz (THz) photonic receivers with built-in frequency selectivity are crucial for integrated THz sensing and communication systems. Silicon photonic crystal waveguides (PCWs) provide...
Pulse-interval-dependent cavitation bubble expansion for high-speed particle manipulation by femtosecond laser irradiation
Focused irradiation of femtosecond laser pulses into an aqueous solution induces cavitation bubbles (CBs) through explosive water vaporization, generating impulsive forces that can be harnessed for pa...
Measurement of the laser pulse phase velocity in plasma channel for DLA optimization
We demonstrate a novel, direct method for measuring the phase velocity vϕ of an intense laser pulse within a plasma channel—the crucial parameter that controls the resonance condition in direct laser...
Laser lift-off process for blue GaN micro-LED automotive digital headlights
Laser lift-off (LLO) is a critical bottleneck in the fabrication of micro-light-emitting diode (micro-LED)-based automotive digital headlights. In this work, a patterned sapphire substrate was success...
Spin–orbit interaction mediated by a nonseparable twist phase of light
Spin–orbit interaction (SOI) of light provides a fundamental mechanism for controlling optical angular momentum, with applications ranging from light manipulation to quantum information processing. Co...
Highly sensitive multi-frequency acoustic sensor based on a high-Q graded hollow-core optical microcavity
A highly sensitive multi-frequency acoustic sensor based on a high-quality-factor (Q-factor) graded hollow-core optical microcavity (GHCOM) is proposed and experimentally demonstrated. The GHCOM, fabr...
Improved ferroelectric properties in lanthanide-doped HfO2 thin films epitaxially grown on yttria-stabilized zirconia substrates
Hafnium oxides are important ferroelectric materials that can be compatible with current silicon-based technology. However, the polar orthorhombic (o) phase is a metastable state, which is hard to con...
High-frequency AC line filtering with silicon carbide-based flexible supercapacitors
Filtering supercapacitors (SCs) are emerging as a potential alternative to bulky aluminum electrolytic capacitors (AECs) for compact power filter electronics, thanks to their high capacitance and fast...
Ultraviolet attenuation–absorption microscopy with an opto-acoustic confocal dual-sensitive sensor and its application in pathological diagnosis
Pathological analysis is essential for cancer diagnosis and treatment. However, the current gold standard based on hematoxylin and eosin (H&E) staining is time-consuming and requires exogenous lab...