On-chip THz photonic receivers with built-in frequency selectivity

B Bingnan Yan X Xuecou Tu H Hongshan Jing (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) C Chen Liang (MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics) Z Zhanzhang Mai (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) Y Yunjie Rui (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) D Dingxuan Gu (Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,) C Chao Wan X Xiaoqing Jia L Lin Kang J Jian Chen P Peiheng Wu

Abstract

Miniaturized terahertz (THz) photonic receivers with built-in frequency selectivity are crucial for integrated THz sensing and communication systems. Silicon photonic crystal waveguides (PCWs) provide a dispersion-engineered platform for THz guiding, yet realizing compact, highly sensitive, and well-isolated multi-channel receivers on a single chip remains challenging. Here, we demonstrate an integrated three-channel THz photonic crystal detector based on an isosceles-triangle-lattice PCW side-coupled to multiple point-defect cavities, each hosting a monolithically integrated Nb5N6 microbolometer. Three spatially separated cavities define distinct narrowband channels around 0.43 THz for on-chip frequency-division-multiplexed detection. By converting a single silicon PCW into a scalable, frequency-division-multiplexed detector array, this work offers a practical route toward integrated THz spectrometers and multi-band front ends for on-chip THz microsystems.

Article Details

Volume / Issue Vol. 128, Issue 25
Published June 22, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

B

Bingnan Yan

X

Xuecou Tu

H

Hongshan Jing

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

C

Chen Liang

MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, School of Physics

Z

Zhanzhang Mai

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

Y

Yunjie Rui

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

D

Dingxuan Gu

Research Institute of Superconductor Electronics (RISE), School of Electronic Science and Engineering, Nanjing University 1 , Nanjing, Jiangsu 210023,

C

Chao Wan

X

Xiaoqing Jia

L

Lin Kang

J

Jian Chen

P

Peiheng Wu