Temperature dependence of spin-dependent recombination in a SiC power device

Abstract

Spin-dependent recombination (SDR) in silicon carbide (SiC) devices provides a powerful route to probe defect physics and spin interactions directly within technologically relevant power electronics. The magnetic field dependence of SDR, particularly under charge pumping biasing conditions that probe the technologically critical SiC/SiO2 interface, has not been systematically investigated in commercial devices. Here, we report on a strong magneto-transport response, deemed magneto charge pumping, centered around zero magnetic field in a commercial 4H-SiC power metal–oxide–semiconductor field-effect transistor (MOSFET). The line shape of this feature is accurately described by the sum of three Lorentzian components: two originating from hyperfine-mediated processes at intermediate and large magnetic fields, and a small-field contribution attributed to spin–spin interactions. Each component shows a distinct and strongly tunable dependence on gate bias and temperature, reflecting changes in the recombination-dissociation dynamics as well as spin–spin interaction strengths within the ensemble interfacial spin-pair probed. These findings establish commercial SiC MOSFETs as practical model systems for SDR studies and reveal substantial experimental tunability in their response, opening pathways for defect spectroscopy and sensing in device-grade SiC.