Applied Physics Letters
Articles in this Issue
Assessing structural order of biological tissues using polarized microwave-induced thermoacoustic imaging
The functional integrity of biological tissues is fundamentally linked to the spatial alignment of their microstructures. While structural order may serve as a key indicator of tissue health and funct...
Persistent photoconductivity in single-layer MoS2: The role of impurities and doping
Persistent photoconductivity is often observed in single-layer MoS2 devices and has a bearing on device applications because it alters device conductivity and characteristics. It originates in the tra...
Planar Schottky gate modulated low turn-on voltage AlN/GaN/AlGaN/GaN Schottky barrier diode
A kind of GaN-based double-channel Schottky barrier diode (DC-SBD) with AlN/GaN/AlGaN/GaN mixed heterostructures was proposed in this work. A step-like profile was fabricated at the anode region using...
Spatial light trapping in vertical graphene/silicon heterojunctions for dual-wavelength signal recognition
Silicon (Si)-based 1550 nm near-infrared photodetection is limited by weak long-wavelength absorption, while planar graphene suffers from limited optical absorption, hampering its use in Si-compatible...
Electric-field control magnetism anisotropy of cobalt based on giant electromechanical effects of Gd-doped ceria thin film
Ionic conductors have recently exhibited giant electromechanical responses, while the strain-based electric-field control of magnetic properties in ferromagnetic/ionic conductor heterostructures is un...
Stage-wise freezing of droplets on cold superhydrophobic microstructured surfaces
The freezing of droplets on cold solid surfaces poses severe challenges to transportation, energy, and infrastructure systems. While superhydrophobic microstructures are widely considered effective pa...
High-BFOM GaN p-channel MOSFETs enabled by ALD Ga2O3 gate dielectric
We report high-performance GaN p-channel MOSFETs enabled by atomic layer deposited (ALD) Ga2O3 as a high-k gate dielectric. The devices achieve a high Baliga's figure of merit of 0.43 MW/cm2 with a br...
Gallium precursor reaction pathway-driven low-temperature atomic layer deposition of IGZO for thin-film transistors
Indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) fabricated by atomic layer deposition (ALD) are promising for large flat-panel display technology requiring low thermal budgets (<4...
Millikelvin Si-MOSFETs for quantum electronics
Large power consumption of silicon CMOS electronics is a challenge in very large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation o...
GaN RF switch with low off-state capacitance and harmonic distortion enabled by an AlGaN back barrier structure
Against the bottlenecks of off-state capacitance and isolation (ISO) performance in GaN radio frequency (RF) switches, this paper proposes an epitaxial regulation strategy based on a back barrier (BB)...
Non-local impact ionization coefficients in Al0.8Ga0.2As
Non-local impact ionization coefficients for Al0.8Ga0.2As, essential for accurate modeling of thin avalanche photodiodes (APDs), are reported over the electric field range of 328–1500 kV cm−1. The coe...
Unlocking cooperative Schottky barrier modulation via weakening Fermi-level pinning in composite–metal–MoS2 heterostructures
Metal/semiconductor contacts critically determine the performance of two-dimensional (2D) MoS2-based devices. Conventional three-dimensional metals (3DMs) induce strong chemical interactions with MoS2...
Multi-Moiré imaging based on femtosecond laser-fabricated microlens arrays
Moiré fringe imaging plays a pivotal role in high-precision measurement, anti-counterfeiting, microstructural analysis, and optical metrology. However, conventional Moiré imaging devices are typically...
Order-parameter-mediated stabilization of the ferroelectric orthorhombic phase in HfO2 by oxygen-vacancy-induced internal stress
Ferroelectricity in HfO2 originates from the formation of a metastable orthorhombic phase (Pca21), yet the microscopic mechanism stabilizing this phase, particularly the role of oxygen vacancies, rema...
Valence-band engineering of robust <i>p</i> -type Ni <i>x</i> Ga1− <i>x</i> O enabling Ga2O3 p–n bipolar junction
The absence of a reliable p-type ultrawide bandgap (UWBG) semiconductor remains a fundamental obstacle to the realization of bipolar Ga2O3-based power devices. Here, we demonstrate valence-band engine...