Electric-field control magnetism anisotropy of cobalt based on giant electromechanical effects of Gd-doped ceria thin film

Z Zhuwu Yi (Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,) K Kai Pan Y Yibao Wu (Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,) S Shaoan Yan (School of Mechanical Engineering and Mechanics, Xiangtan University 3 , Xiangtan 411105, Hunan,) G Guodong Liu (School of Materials Science and Engineering) Q Qingfeng Zhan (Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,) H Haoyu Lin (Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,) S Shuhong Xie

Abstract

Ionic conductors have recently exhibited giant electromechanical responses, while the strain-based electric-field control of magnetic properties in ferromagnetic/ionic conductor heterostructures is unclear. Here, a Gd-doped ceria (CGO) thin film with giant electromechanical responses was prepared by chemical solution deposition, wherein the maximum electrostrictive coefficient |M33| approaches 1.61 × 10−17 m2/V2 at 10 mHz with 4.56 % strain, and the pseudo-piezoelectric coefficient |d33| reaches 1078 pm/V. It is shown that the Co/CGO heterostructure reveals controllable electric-field-modulated magnetic anisotropy, with the converse magnetoelectric coupling coefficient reaching 2.13 × 10−8 s/m. This study provides a new way for miniaturizing low-frequency signal-based devices for seawater communication and developing novel electric-field-controlled magnetic memory devices.

Article Details

Volume / Issue Vol. 129, Issue 2
Published July 13, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Z

Zhuwu Yi

Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,

K

Kai Pan

Y

Yibao Wu

Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University 1 , Xiangtan 411105, Hunan,

S

Shaoan Yan

School of Mechanical Engineering and Mechanics, Xiangtan University 3 , Xiangtan 411105, Hunan,

G

Guodong Liu

School of Materials Science and Engineering

Q

Qingfeng Zhan

Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,

H

Haoyu Lin

Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University 4 , Shanghai 200241,

S

Shuhong Xie