Millikelvin Si-MOSFETs for quantum electronics

Abstract

Large power consumption of silicon CMOS electronics is a challenge in very large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond the levels facilitated by currently available CMOS technologies. We have manufactured fully depleted silicon-on-insulator MOSFETs tailored to overcome the power dissipation barrier toward sub-1 K applications. With these cryo-optimized transistors we achieve a major milestone of reaching subthreshold swing of 0.3 mV/dec at 420 mK. This is a significant step toward realizing the very large-scale integration of cryo-CMOS electronics for ultra-low temperature applications.