Applied Physics Letters
Articles in this Issue
Nonlinearly driven memory loss of incubation effects in fused silica excited by near single-cycle laser pulses
The nonlinear interaction of near-infrared ultrashort laser pulses with bulk fused silica at intensities below the catastrophic damage threshold is the birthplace of local electronic excitation events...
Line-shape-based peak locking applied to the optical clock
In high-precision spectroscopy and quantum metrology, the stabilized system parameters at the peak of spectral lines are often required. Here, we propose a line shape-based peak locking (LSBPL) method...
Dual-barrier GeSn quantum-well lasers with operation up to 150 K
GeSn/SiGeSn quantum wells (QWs) have been investigated for the development of GeSn-based lasers. Barrier/well configurations including GeSn/GeSn and SiGeSn/GeSn were grown and characterized to evaluat...
Micro-array-enhanced structure–function analysis of effective thermal boundary resistance in GaN/SiN <i>x</i> /diamond heterostructures
The effective thermal boundary resistance (TBReff) of GaN/SiNx/diamond heterostructures is characterized using a micro-array-enhanced structure–function–transient dual interface method (SF–TDIM). To o...
Tailoring defects to boost Eu3 <b>+</b> emission in MgGeO3 phosphors
Owing to the centrosymmetric 4fn configuration of rare-earth ions, their electric-dipole 4f–4f transitions are parity-forbidden, resulting in low oscillator strengths and poor excitation efficiency. T...
Enabling thin p-GaN Ohmic contacts through ultrathin magnesium deposition and brief thermal annealing
Gallium nitride (GaN) is a key semiconductor for optoelectronic and power electronic applications. However, achieving low-resistance Ohmic contacts to p-GaN remains challenging, particularly after pla...
Frequency-tunable superconducting microwave resonators based on quantum paraelectricity
Frequency tuning enables both high-sensitivity and wide-bandwidth detection in the resonator. Potassium tantalate (KTO) is a quantum paraelectric with tunable permittivity and low microwave loss at cr...
2.7-kV CuCrO2/Ga2O3 heterojunction diode with stepped-mesa termination and on-state electrical stress reliability
In this work, we report vertical CuCrO2/β-Ga2O3 p–n heterojunction diodes (HJDs) incorporating a stepped-mesa termination for enhanced blocking performance and robust on-state reliability. The optimiz...
Continuous-wave terahertz photomixing in a silicon-compatible Ge-on-Si nano-air-channel photodiode
We demonstrate a silicon-compatible Ge-on-Si nano-air-channel photodiode for continuous-wave terahertz photomixing at 1550 nm. While nano-air-channel devices offer a promising route to ultrafast carri...
Demonstration of ferroelectric GaN transistors with area-ratio-controlled AlScN-based MFMIS gate stack
In this study, we demonstrate an AlScN/GaN ferroelectric high-electron-mobility transistor (FE-HEMT) employing an area-ratio (AR)-controlled metal–ferroelectric–metal–insulator–semiconductor (MFMIS) g...
Thermal expansion coefficients and unit cell parameters for r-GeO2 heteroepitaxy on r-TiO2/Ti1− <i>x</i> Ge <i>x</i> O2
The disclosure of the full potential of rutile germanium dioxide (r-GeO2) as a new generation material for power electronics requires the development of its heteroepitaxy. In this context, the isostru...
Two-and-a-half decades of progress in mid-infrared AlGaN/GaN inter-subband light emitters
In this paper, the physics of AlGaN/GaN inter-subband (ISB) light emitters is presented. The important milestones of this research, including the relatively slow and winding early stages of device des...
Intriguing optoelectronic properties of 2D Ca2ZrSe4 chalcogenide perovskite from first principles
Chalcogenide perovskites (CPs) have been attracting great attention as a promising light absorber for the next-generation perovskite solar cells (PSCs), but a deep insight into their material properti...
Enhancement of multiferroic response in La-doped PbTiO3–TbFeO3 perovskite
A novel solid solution of La-doped 0.80PbTiO3-0.20Tb(1−x)LaxFeO3, in the range 0.02 ≤ x ≤ 0.15, was studied for ferroelectric, electromechanical, and magnetic properties. Notably, at x = 0.08, the mat...
Enhanced Curie temperature and large spin Hall conductivity due to the magnetic proximity effect in CrI3/Pt heterostructures
Metal/van der Waals (vdW) heterostructures enable versatile interfacial spin control for spintronic applications. Using density-functional theory, we investigate the interfacial magnetic proximity eff...
<i>In situ</i> estimation of local acoustic pressure amplitude by force balancing with a ferrofluid droplet probe
Acoustic tweezers enable non-contact manipulation of microscale objects, but quantitative in situ evaluation of the peak local pressure amplitude remains difficult in confined devices. Conventional hy...
Wide-field magnetic imaging of shielding-current-driven vortex rearrangement under local heating using diamond quantum sensors
Understanding and controlling vortex motion in superconductors are important both for suppressing dissipation in superconducting devices and for device applications that exploit vortices. In this work...
Enhanced energy storage performance in PbZrO3 antiferroelectric films through synergistic doping and strain strategies
Antiferroelectric thin films, particularly PbZrO3-based systems, are attractive for advanced energy storage due to their field-induced phase transitions and high dielectric responses. However, achievi...
Dual-path gain in Si-based ZnGa2O4 MOSFET solar-blind ultraviolet phototransistors
Solar-blind ultraviolet (UV) photodetection on silicon platforms is an important step toward practical optoelectronic integration. Here, we demonstrate a bottom-gate ZnGa2O4 metal-oxide-semiconductor...
Cluster-assembled CdO polymorph: A semiconductor with high carrier mobility and superior optical performance
Using the magic cluster Cd8O8 and a C linker, we constructed a new CdO polymorph, Tet-CdO, via bottom-up assembly. Tet-CdO exhibits good mechanical, thermal, and dynamical stability, with a B1-to-Tet...
Uncovering novel photoluminescence characteristics of Cu2ZnSnS4 thin-film solar cells through pulsed laser excitation
Photoluminescence (PL) spectroscopy under pulsed laser excitation was employed to investigate the recombination mechanisms in a Cu2ZnSnS4 (CZTS) thin-film solar cell over a temperature range of 8–300 ...
Observation of single antiferromagnetic magnon modes through tunneling spectroscopy of spin-1/2 Kitaev system α-RuCl3
The small-gap room-temperature semiconductor α-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realization of an exotic matt...
Single-shot ultrafast dynamics of nanosecond pulsed plasmas: Transition from ps–ns nonequilibrium to near-full ionization
The ultrafast multi-stage evolution of state-defining properties in atmospheric-pressure nanosecond pulsed plasmas is quantified using single-discharge, jitter-free, continuous streak-sweep spectrosco...
Publisher's Note: “Pressure-induced contact resistance dominance in scanning spreading resistance microscopy of undoped InAs/GaSb heterostructure” [Appl. Phys. Lett. <b>128</b> , 262106 (2026)]
Experimental observation of metamaterial-enabled high-density waveguides with low crosstalk
Crosstalk in densely spaced waveguides fundamentally constrains the integration density of photonic circuits. Although various strategies exist to mitigate crosstalk for transverse-electric (TE) modes...