Dual-barrier GeSn quantum-well lasers with operation up to 150 K

S Sudip Acharya (Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) K Kushal Dahal (Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,) E Enbo Yang (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,) X Xiaoxin Wang X Xuehuan Ma (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,) Q Quang Minh Thai (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,) H Hryhorii Stanchu (Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,) Y Yunsheng Qiu (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,) J Jifeng Liu (Thayer School of Engineering, Dartmouth College 3 , Hanover, New Hampshire 03755,) W Wei Du (Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China) S Shui-Qing Yu (Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,)

Abstract

GeSn/SiGeSn quantum wells (QWs) have been investigated for the development of GeSn-based lasers. Barrier/well configurations including GeSn/GeSn and SiGeSn/GeSn were grown and characterized to evaluate carrier confinement and collection efficiency. In our previous work, a dual-barrier design (SiGeSn barrier/GeSn barrier/GeSn well) exhibited improved carrier collection efficiency for a GeSn single QW structure compared with a single-barrier configuration; however, no lasing had been reported from dual QW devices to date. Here, we report lasing from a GeSn dual-barrier single QW structure up to 140 K, with a threshold of 67 kW/cm2 at 77 K, representing a substantial threshold reduction. In addition, a 4-QW laser employing the same dual-barrier design demonstrates a clearly reduced threshold of 50 kW/cm2 at 77 K and a slightly increased maximum operating temperature of 150 K. The lower lasing threshold is attributed to decreased average carrier concentration in each well that improves the differential gain and the reduced Auger recombination rate.

Article Details

Volume / Issue Vol. 129, Issue 6
Published August 10, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

S

Sudip Acharya

Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

K

Kushal Dahal

Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,

E

Enbo Yang

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,

X

Xiaoxin Wang

X

Xuehuan Ma

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,

Q

Quang Minh Thai

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,

H

Hryhorii Stanchu

Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,

Y

Yunsheng Qiu

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,

J

Jifeng Liu

Thayer School of Engineering, Dartmouth College 3 , Hanover, New Hampshire 03755,

W

Wei Du

Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China

S

Shui-Qing Yu

Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,