Applied Physics Letters

Vol. 126, Issue 2 Issue 2 2025
88
Articles

Articles in this Issue

A flexible piezoresistive three-dimensional strain sensor based on laser-induced graphene/nanosilver/MWCNTs for precise human all-range motion detection

Yijie Wang, Xiaohong Li, Xinyu Xu et al. Jan 13, 2025 10.1063/5.0226375

Flexible piezoresistive strain sensors are crucial for monitoring human motion, but achieving the right balance between sensitivity and operating range has always been challenging. Additionally, the c...

Parallel manipulation of multiple ink droplets via near-infrared light on lubricant infused surface

Yalin Hu, Jie Wu, Haiyan Luo et al. Jan 13, 2025 10.1063/5.0241263

Previous studies on light-driven droplet transport often use light to heat the substrate to generate a temperature difference, thereby changing the wettability or surface tension at two ends of a drop...

Manipulating the electronic and magnetic properties by ferroelectric polarization switching in 2D NiCl2/Ga2S3 van der Waals heterostructure

Shu Wang, Tianxia Guo, Licheng Wang et al. Jan 13, 2025 10.1063/5.0245541

Exploring magnetoelectric coupling properties in multiferroic materials is scientifically intriguing and of great technical importance in nanoscale devices. In this work, the magnetoelectric coupling...

Ferromagnetism and structural phase transition in monoclinic FeGe film

Guangdong Nie, Guanghui Han, S. Z. Erfa et al. Jan 13, 2025 10.1063/5.0250221

Binary compound FeGe hosts multiple structures, from cubic and hexagonal to monoclinic. Compared to the well-known skyrmion lattice in the cubic phase and the antiferromagnetic charge–density wave in...

Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures

Wenxiang Wang, Zheng Wei, Yong Jun Li et al. Jan 13, 2025 10.1063/5.0245016

The rapid evolution of devices based on low-dimensional materials such as MoS2 and single-walled carbon nanotubes (SWNTs) has garnered significant interest for high-performance field-effect transistor...

Efficient optical trapping force tuning for cusp-catastrophe autofocusing beams using deep neural networks

Xiaofang Lu, Peiyu Zhang, Haixia Wu et al. Jan 13, 2025 10.1063/5.0241264

Structured light adjusts optical trapping forces through flexible structure design. However, it is challenging to evaluate optical forces on microscopic particles in structured light due to high compu...

Observation of uncommon elastic wave group velocity in common honeycomb structure and its potential for debonding detection

Ye Yuan, Bin Liu, Han Jia et al. Jan 13, 2025 10.1063/5.0237493

We report wave propagation with an uncommon negative group velocity (NGV) feature in the common honeycomb structure. Theoretical analysis indicates that the NGV feature arises from the repulsion betwe...

Kinetic inductance and non-linearity of MgB2 films at 4K

J. Greenfield, C. Bell, F. Faramarzi et al. Jan 13, 2025 10.1063/5.0245866

We report on the fabrication and characterization of superconducting magnesium diboride (MgB2) thin films intended for quantum-limited devices based on non-linear kinetic inductance (NLKI) such as par...

GaO<i>x</i> interlayer-originated hole traps in SiO2/<i>p</i>-GaN MOS structures and their suppression by low-temperature gate dielectric deposition

Masahiro Hara, Takuma Kobayashi, Mikito Nozaki et al. Jan 13, 2025 10.1063/5.0246368

In this study, we investigated the impact of SiO2 deposition temperature during plasma-enhanced chemical vapor deposition on the generation of fast hole traps, which cause surface potential pinning, i...

Manipulation of field-effect transistors by flexoelectric effect

Yuxin Zuo, Ying Yu, Haoran Wang et al. Jan 13, 2025 10.1063/5.0231603

Flexoelectric field-effect transistors (FE-FETs) hold significant potential for applications in biomedical and healthcare sensing fields. While existing piezoelectric FETs sense physiological signals...

Enhanced performance and long-term stability of 2D photodetectors through hexagonal boron nitride encapsulation

Huijuan Zhao, Qiyuan Zhou, Yufan Wang et al. Jan 13, 2025 10.1063/5.0244991

Two-dimensional (2D) semiconductor materials, such as molybdenum disulfide (MoS2), demonstrate considerable potential for optoelectronic applications, largely due to their atomic thickness, tunable ba...

Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film

Ta-Shun Chou, Jana Rehm, Saud Bin Anooz et al. Jan 13, 2025 10.1063/5.0242301

This study focuses on the impact of high-doping impurities (&amp;gt;1018 cm−3) on the morphology of homoepitaxially grown (100) 4° off β-Ga2O3 film, as well as incorporating insights from the Cabrera–...

Impact of a RbF post-deposition treatment on the chemical structure of wide-gap CuIn0.1Ga0.9Se2 thin-film solar cell absorber surfaces

Luisa Both, Dirk Hauschild, Mary Blankenship et al. Jan 13, 2025 10.1063/5.0239968

A detailed characterization of the impact of a RbF post-deposition treatment (RbF-PDT) on the chemical structure of a wide-gap Cu(In, Ga)Se2 thin-film solar cell absorber surface with a high Ga/(Ga +...

Deposition of plasmonic ITO nanoparticles by near-infrared laser ablation

Seung Hyuk Lee, Ming Yin, Tetsu Tatsuma Jan 13, 2025 10.1063/5.0245805

Compound nanoparticles (NPs) attract attention because of their unique electrical, optical, and catalytic properties. Among them, plasmonic tin-doped indium oxide (ITO) NPs are characterized by transp...

Improving the performance of solar cells by optimizing the interface of SnO2/perovskite layer using sodium citrate

Yongqi Zhang, Yueyan Wang, Ruilin Liu et al. Jan 13, 2025 10.1063/5.0242806

Interface engineering is an important means of modifying perovskite solar cells (PSCs). In this paper, a strategy for modifying the SnO2/perovskite interface transport layer using sodium citrate (SC),...

Thermal conductivity of AlN thin films deposited by reactive DC magnetron sputtering on different substrates using ultra-fast transient hot strip technique

R. Zernadji, B. E. Belkerk, B. Riah et al. Jan 13, 2025 10.1063/5.0244583

In the frame of this work, we report a profound insight into the thermal conductivity (k) of aluminum nitride (AlN) thin films deposited on AlN-molecular beam epitaxy (MBE)/Si(111) and AlN-Kyma/Si(111...

Self-powered ultraviolet position-sensitive detectors based on PrNiO3/Nb-doped SrTiO3 p–n junctions

Xianjie Wang, Chang Hu, Lingli Zhang et al. Jan 13, 2025 10.1063/5.0244086

Position-sensitive detectors based on the lateral photovoltaic effect have been widely used in optical engineering for the measurement of position, distance, and angles. However, self-powered ultravio...

High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing

Pan Wen, Cong Peng, Xingwei Ding et al. Jan 13, 2025 10.1063/5.0250886

A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a conventional IGZO l...

Size effect on Raman measured stress and strain induced phonon shifts in ultra-thin silicon film

C. Pashartis, M. J. van Setten, G. Pourtois Jan 13, 2025 10.1063/5.0240392

The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano)electronic devices, often leads to residual stress in the different layers present. This stress gradie...

Lowering the skyrmion depinning current in synthetic antiferromagnetic systems

Yancheng Wang, Xin Xie, Haobing Zhang et al. Jan 13, 2025 10.1063/5.0242419

Magnetic skyrmions, as topological spin textures, offer great potential for next-generation spintronic applications. Skyrmions in artificially synthesized antiferromagnets (SAFs) are particularly prom...

High-temperature performance of metal/n-Ga2O3/p-diamond heterojunction diode fabricated by ALD method

Dan Zhao, Zhangcheng Liu, Wenqian Wang et al. Jan 13, 2025 10.1063/5.0238924

A metal/n-Ga2O3/p-diamond heterojunction diode with superior high-temperature performance was demonstrated in this work. The p-type diamond was lightly boron doped, and the Ga2O3 film was grown via at...

Synergistic physical and chemical effects of MOF-derived porous Fe3C–NC to boost the performance of Li–S batteries

Wanyang Chen, Junan Feng, Lu Yin et al. Jan 13, 2025 10.1063/5.0240597

Lithium–sulfur (Li–S) batteries are one of the key objects of next-generation energy storage systems due to their high energy density and low-cost characteristics. However, the slow reaction kinetics...

Spin injection and detection using perpendicularly magnetized Mn/Co bilayers grown on GaAs via all electrical methods

Mineto Ogawa, Kotaro Nara, Michihiko Yamanouchi et al. Jan 13, 2025 10.1063/5.0239771

The electrical spin injection and detection in perpendicularly magnetized Mn/Co/n-GaAs junction was investigated using a non-local method. Clear non-local spin-valve signals and Hanle effect signals w...

First-principles study on electronic and optical properties of perovskite light-emitting diodes CsPb(Br1<b>−</b> <i>x</i>I<i>x</i>)3

Peng Xiong, Jin-Bo Liao, Zhong-Yuan Wang et al. Jan 13, 2025 10.1063/5.0250664

CsPb(Br1−xIx)3, a mixed-halide all-inorganic perovskite, is a promising light-emitting diode (LED) material due to its impressive performance. It has been demonstrated that the mixing parameter x of h...

Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi et al. Jan 13, 2025 10.1063/5.0247660

We demonstrate a significant effect of atomic-scale MgO insertion layers on the tunnel magnetoresistance (TMR) in epitaxial magnetic tunnel junctions (MTJs) using a small bandgap oxide MgGa2O4. An enh...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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