Multifunctional complementary field-effect transistors based on MoS2/SWNTs heterostructures

Abstract

The rapid evolution of devices based on low-dimensional materials such as MoS2 and single-walled carbon nanotubes (SWNTs) has garnered significant interest for high-performance field-effect transistor (FET) applications. We present a multifunctional MoS2/SWNT device exhibiting non-monotonic current modulation with a rectifying ratio of up to 600. The device also demonstrates remarkable optoelectronic memory performance, including fast erasing/writing times (20.1/1.9 ms), a high erasing/writing ratio (104), multilevel data storage, robust retention (10 000 s), and excellent endurance (1000 cycles). Additionally, we demonstrate ternary inverters combining SWNTs FETs with MoS2/SWNTs heterostructure FETs, highlighting their potential in advanced logic applications.