Ferromagnetism and structural phase transition in monoclinic FeGe film

G Guangdong Nie (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) G Guanghui Han S S. Z. Erfa (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) K Kangxi Liu (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) S Shijian Chen (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) H Hao Ding F Fangdong Tang (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) L Licong Peng Y Young Sun (Department of Applied Physics, Chongqing University 1 , Chongqing 401331,) D Deshun Hong (Department of Applied Physics and Center of Quantum Materials and Devices Chongqing University Chongqing China)

Abstract

Binary compound FeGe hosts multiple structures, from cubic and hexagonal to monoclinic. Compared to the well-known skyrmion lattice in the cubic phase and the antiferromagnetic charge–density wave in the hexagonal phase, the monoclinic FeGe is less explored. Here, we synthesized the monoclinic FeGe films on Al2O3 (001) and studied their structural, magnetic, and transport properties. X-ray diffraction and transmission electron microscopy characterizations indicate that the FeGe films are epitaxial to the substrate. Unlike the antiferromagnetic bulk, the monoclinic FeGe films are ferromagnetic with Curie temperature as high as ∼800 K, contributing to the anomalous Hall effect in the transport measurements. Similar to the hexagonal FeGe, we captured a structural phase transition in the monoclinic FeGe films at ∼100 K in real and reciprocal spaces by transmission electron microscope. Our work enriches the phase diagram of the FeGe family and suggests that FeGe offers an ideal platform for studying multiphase transitions and related device applications.

Article Details

Volume / Issue Vol. 126, Issue 2
Published January 13, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

G

Guangdong Nie

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

G

Guanghui Han

S

S. Z. Erfa

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

K

Kangxi Liu

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

S

Shijian Chen

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

H

Hao Ding

F

Fangdong Tang

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

L

Licong Peng

Y

Young Sun

Department of Applied Physics, Chongqing University 1 , Chongqing 401331,

D

Deshun Hong

Department of Applied Physics and Center of Quantum Materials and Devices Chongqing University Chongqing China