Applied Physics Letters
Articles in this Issue
Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
A major obstacle in the commercialization of GaN-on-Si RF HEMTs lies in the elevated thermal resistance introduced by the AlN/AlGaN multi-layer buffer, employed for stress management. This issue adver...
High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation
Schottky-gated terahertz high-electron mobility transistors with ultrathin barriers suffer from metal-induced gap states (MIGSs), leading to gate leakage and electron scattering that degrade transport...
Direct evidence and thermodynamics for the conversion between nitrogen pairs and interstitial nitrogen atoms in nitrogen-doped Czochralski silicon
The conversion between di-interstitial nitrogen (N2) pairs and interstitial nitrogen (Ni) atoms has long been conceptually presented to understand the nitrogen behaviors in nitrogen-doped Czochralski...
Enhancement of wall-plug efficiency in AlGaN deep-ultraviolet light-emitting diodes by micro-mesh p-electrode and scattering nanostructures
We report an enhancement of the wall-plug efficiency (WPE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). This enhancement was achieved through fabrication of a micro-mesh p-electro...
Phonon folding and transport in SiC polytypes from first principles
Silicon carbide (SiC) crystallizes in more than 200 polytypes with various crystal classes, including cubic, hexagonal, and rhombohedral structures. They differ from each other mainly by the stacking...
Pseudo-substrate boost layer-enabled integration of mixed-phase BiFeO3 on silicon
Ferroelectric oxides have attracted considerable attention due to their unique intrinsic properties, such as spontaneous polarization and high dielectric constants, which make them promising candidate...
Deep ultraviolet optoelectronic memristors based on gallium oxide for biomimetic visual processing and neuromorphic memory applications
Deep ultraviolet (DUV) has a wide range of applications in areas such as the monitoring and communication fields. However, the separation of sensor units and memory units in conventional DUV photodete...
A sandwich pMUT for the amplification of ultrasound transmission and reception
Piezoelectric micromachined ultrasound transducers (pMUTs) are essential for ultrasonic communication as well as energy harvesting and transmission. While pMUTs typically demonstrate lower energy conv...
Electrically induced Dzyaloshinskii–Moriya interaction and exchange bias in a van der Waals magnet Cr1.2Te2
The Dzyaloshinskii–Moriya interaction (DMI) is an antisymmetric exchange interaction that favors noncollinear spin configurations and plays an essential role in high-density, low-power magnetic memori...
Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors
In this study, the effects of doping with different contents of the rare-earth element yttrium (Y) on the electrical performance of indium zinc oxide (IZO) and bilayer IZO/IYZO thin-film transistors (...
Improvement of TiO2 memristor properties by <b>α</b>-particles irradiation
This paper investigates the effect of alpha-particle irradiation on the memristive properties of titanium oxide-based structures. Multilayer TiOx/Ti structures were fabricated by magnetron sputtering...
Designing robust M–N–C single-atom catalysts for NOx sensing
Sensitive and selective detection of nitrogen oxides (NOx) is increasingly critical for both environmental protection and human health. However, current detecting methods are based on metal oxide sens...
Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
Interfacial second harmonic generation (SHG) switching mediated by insulator–metal phase transition of VO2 can serve as switchable and ultracompact nonlinear optical elements for on-chip logical optic...
Deterministic control of magnetic skyrmion motions via engineered potential wells
Magnetic skyrmions, characterized by their topological protection, nanoscale size, and low driving current density, hold immense promise for next-generation ultradense memory and logic devices. Howeve...
Pressure-tuning ferroelectric relaxation process in BaFe4O7
Low-energy ferroelectric photocurrent switches hold promise for optoelectronic devices and digital logic gates. Pressure, a clean and efficient method for microstructure tuning, can significantly affe...
Unveiling the role of temperature in sign reversal of anomalous Hall resistivity in epitaxial Pt(3 nm)/Fe4N(≤6 nm)/MgO heterostructures toward spintronic devices
The interested anomalous Hall effect (AHE) that occurs in heavy nonmagnetic metal/ferromagnetic metal systems holds immense promise for AHE-based spintronic devices design. However, the mechanisms are...
High carrier mobility of diamond (100) enabled by surface modification using doped hexagonal boron nitride
Diamond with high carrier mobility is desirable for the next generation electronic devices for high-speed, high-power, and radio frequency applications, which, however, is difficult to achieve due to...
Hot electron spectroscopy for intrinsic Schottky barrier determination at metal–InGaZnO interfaces
In this Letter, a three-terminal hot electron transistor is developed to explore the energy alignment between metal and amorphous indium–gallium–zinc oxide (a-IGZO). Utilizing detailed analysis of the...
Hydrostatic pressure effects on spin depolarization dynamics in wurtzite GaN
Spin depolarization dynamics of wurtzite GaN under hydrostatic pressure was investigated by combining a time-resolved Kerr rotation spectroscopy with a diamond-anvil cell technique. Upon resonant exci...
Optimal multipole center for subwavelength acoustic scatterers
The multipole expansion is a powerful framework for analyzing how subwavelength-size objects scatter waves in optics or acoustics. The calculation of multipole moments traditionally uses the scatterer...
Orthorhombic ITO epitaxially stabilized on a perovskite oxide substrate
Doped indium oxides, such as indium tin oxide (ITO), have been used as transparent conducting materials and have recently attracted increasing interest as thin-film channel materials for high-performa...
Polarization-controllable interface charge transfer and photovoltaic properties in CuInP2S6/AsSBr heterostructures
Understanding charge behaviors at the interface of 2D van der Waals ferroelectric heterostructures is one of the important problems in fundamental physics and the key for designing high-performance op...