Thermal resistance optimization of GaN-on-Si materials for RF HEMTs based on structure function method and static-pulsed I–V measurements
Abstract
A major obstacle in the commercialization of GaN-on-Si RF HEMTs lies in the elevated thermal resistance introduced by the AlN/AlGaN multi-layer buffer, employed for stress management. This issue adversely impacts device performance and reliability. In this study, the structure function method was utilized to precisely determine the intrinsic thermal resistance of GaN-on-Si materials. Results reveal that a single-layer AlN buffer demonstrates a significantly enhanced heat dissipation capability compared to conventional AlN/AlGaN multi-layer or superlattice buffer. Additionally, the thermal performance of device under operation was quantitatively assessed using static-pulsed I–V measurements. Through theoretical simulations, the influence of GaN buffer structures on heat distribution within GaN-on-Si RF devices was explored, indicating that optimizing GaN buffer thickness can further enhance thermal performance. This research offers a thorough understanding of the relationship between material structures and RF device thermal behavior, providing crucial insights for the thermal management design of GaN-on-Si RF HEMTs.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Qingru Wang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,
Yu Zhou
Xiaozhuang Lu
College of Microelectronics, Beijing University of Technology 1 , Beijing 100022,
Xiaoning Zhan
Beijing Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials, Department of Chemistry and Chemical Engineering, School of Chemistry and Biological Engineering
Quan Dai
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 1 , Suzhou 215123,
Jianxun Liu
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,
Qian Li
Xinkun Zhang
Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,
Yamin Zhang
Qian Sun
Shiwei Feng
College of Microelectronics, Beijing University of Technology 1 , Beijing 100022,
Zhihong Feng
National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute 3 , Shijiazhuang 050051,
Meixin Feng
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,
Xin Chen
Hui Yang