Improvement of TiO2 memristor properties by <b>α</b>-particles irradiation
Abstract
This paper investigates the effect of alpha-particle irradiation on the memristive properties of titanium oxide-based structures. Multilayer TiOx/Ti structures were fabricated by magnetron sputtering and subjected to alpha-particle irradiation with a fluence of 2 × 1012 ions/cm2. Defect formation was modeled using the Monte Carlo method. The memristive characteristics of the structures were studied before and after bombardment. Ion bombardment was found to increase the number of stable resistive states by nearly three times, extend the number of switching cycles by 1.5 times, and significantly enhance the ROFF/RON ratio. This optimization of memristive parameters is attributed to the formation of locally created defects.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
A. S. Ilin
Faculty of Physics, Moscow State University 1 , Moscow,
P. A. Forsh
Faculty of Physics, Moscow State University 1 , Moscow,
Yu. V. Balakshin
Skobeltsyn Institute of Nuclear Physics, Moscow State University 2 , Moscow,
B. S. Shvetsov
Faculty of Physics, Moscow State University 1 , Moscow,
D. V. Gusev
Faculty of Physics, Moscow State University 1 , Moscow,
D. M. Rusakov
Faculty of Physics, Moscow State University 1 , Moscow,
I. I. Zadiriev
Faculty of Physics, Moscow State University 1 , Moscow,
E. V. Kukueva
National Research Center “Kurchatov Institute 3 ,” Moscow,
M. N. Martyshov
Faculty of Physics, Moscow State University 1 , Moscow,
A. V. Emelyanov
National Research Center “Kurchatov Institute 3 ,” Moscow,
A. A. Shemukhin
Skobeltsyn Institute of Nuclear Physics, Moscow State University 2 , Moscow,
P. K. Kashkarov
Faculty of Physics, Moscow State University 1 , Moscow,