Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
Abstract
Interfacial second harmonic generation (SHG) switching mediated by insulator–metal phase transition of VO2 can serve as switchable and ultracompact nonlinear optical elements for on-chip logical optical operations. We propose that enhanced conversion efficiency and switching ratio of interfacial SHG in telecom band can be achieved with multilayer InSe/VO2 heterostructure, which has been comprehensively validated by a theoretical model of interfacial SHG and SHG spectra measurements. Our results provide solid guidance for designing interfacial SHG switching devices of high performance.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Yuanyuan Li
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
Yu Sun
Liang Li
Jinhao Huang
Letian Yin
School of Electronics and Information Engineering, Nanjing University of Information Science and Technology 1 , Nanjing 210044,
Liangxin Qiao
Jianhua Chang
School of Electronics and Information Engineering, Nanjing University of Information Science and Technology 1 , Nanjing 210044,
Zeming Qi
Qiannan Cui
School of Electronic Science and Engineering, Southeast University 2 , Nanjing 210096,
Chongwen Zou
National Synchrotron Radiation Laboratory, University of Science and Technology of China 2 , Hefei, Anhui 230029,