Applied Physics Letters
Articles in this Issue
Development of a high-efficient and uniform microwave-induced atmospheric pressure linear plasma jet source based on a square coaxial structure
A microwave-induced atmospheric pressure linear plasma jet source at 2.45 GHz based on a square coaxial structure was proposed. The device was capable of generating a plasma jet by exciting argon gas...
Nonmonotonic phonon thermal conductivity modulated by electron–phonon interaction in graphene/h-BN heterostructures
Graphene van der Waals (vdW) heterostructures, particularly those combined with hexagonal boron nitride (h-BN), exhibit unique electron–phonon interaction (EPI), enabling remarkable electron transport...
Rethinking redox electrolyte design: Why diffusion layer ion exchange matters more than surface area
Redox electrolyte-enhanced aqueous energy storage devices (RE-AESDs) offer a promising route to surpass the energy density of traditional supercapacitors, but their performance is often plagued by par...
Atomic-scale <i>in situ</i> TEM investigation of electron beam-induced repair of multiple defects in <b> <i>α</i> </b>-Ga2O3 heterogeneous epitaxial single-crystal films
In the process of epitaxial growth of α-Ga2O3, high density dislocations influence the quality of materials and the performance of devices. In this work, the effects of electron beam irradiation in tr...
Electron transport in Ge(Sn)metal-oxide-semiconductor field-effecttransistors at cryogenic temperatures
Germanium-tin (GeSn) alloys are promising for electronic and photonic applications due to their direct-bandgap characteristics. However, the transition from indirect- to direct-bandgap in Ge(Sn) has n...
Plasma etching enabling the fast reconstruction of pre-catalysts into defective metal oxyhydroxides with high spin state and activated lattice oxygen for efficient oxygen evolution
Transition metal-based catalytic materials are promising pre-catalysts for oxygen evolution reaction (OER), during which the in situ reconstructed metal oxyhydroxides are real active sites. However, a...
Hybrid and heterogeneous integration in photonics: From physics to device applications
<i>In situ</i> transmission electron microscopy observation of N ion radiation damage in the GaN material at high temperature
This study employs in situ transmission electron microscopy (TEM) to investigate the dynamic evolution of radiation-induced defects in gallium nitride (GaN) under high temperature (800 °C). The result...
Large quadratic magnetoresistance caused by disorder in WTe2 nanoflakes
The origin of large magnetoresistance (MR) in WTe2 has been extensively debated, with electron–hole compensation initially proposed as the dominant mechanism. Herein, we systematically investigate the...
Plasma-induced formation of wavy graphite structures for enhanced lithium storage
This study introduces a plasma-driven strategy to improve the energy-intensive and inefficient characteristics of conventional graphite anode manufacturing for lithium-ion batteries. By utilizing ultr...
Dielectric and piezoelectric properties of prestressed Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals under alternating and direct current poling
This study investigates the effect of prestress during the electric poling of [001]-cut Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) piezoelectric single crystals under both alternating current poling (ACP) and d...
Near- to far-infrared omnidirectional spectral control of thermal emission via transition metal chalcogenide polaritonics for thermophotovoltaics
Omnidirectional spectral thermal emission control over broad infrared wavelengths from the near-infrared (NIR) to the long-wavelength infrared (LWIR) range and over a large angular range has been one...
Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy
In power amplifiers, achieving maximum drain efficiency requires deeper class-AB operation. Class-AB devices are biased near pinch-off, where the charge density is low. N-polar gallium nitride (GaN) h...
A nonvolatile multistate memory by electric field control of half-metallicity in a noncentrosymmetric FeI2 bilayer coupled with ferroelectric <b> <i>α</i> </b>-In2Se3
The development of high-density, low-power spintronic memory demands nonvolatile control of spin-dependent transport properties. Here, we demonstrate electric field-induced reversible half-metallic tr...
Large magnetic Bragg peak enhancement by ultrasound injection on FeTiO3
FeTiO3 is an ilmenite antiferromagnetic insulator containing Fe2+, with two-dimensional ferromagnetic honeycomb layers antiferromagnetically stacked along the c-axis. The magnetic Bragg peak intensity...
Excitatory and inhibitory optical neuron implementation using lasing wavelength switching in edge-coupled InAs/InGaAs/GaAs quantum dot lasers
We report on lasing wavelength switching effects in InAs/InGaAs/GaAs quantum dot (QD) edge-emitting lasers activated by electrical and additional optical pumping provided by another edge-coupled QD la...
Thin-plate stress monitoring using S1-ZGV mode based on a PVDF comb transducer
This Letter proposes an ultrasonic stress monitoring method utilizing the S1 zero group velocity (S1-ZGV) mode based on a PVDF comb transducer. Experimental investigations have revealed that under var...
Magnetic exchange interactions in room-temperature altermagnet KV2Se2O
Altermagnets unify the merits of ferromagnets (strong magneto responses) and antiferromagnets (zero stray fields), demonstrating time-reversal symmetry breaking, intrinsic demagnetization effects, and...
Optical dichroism, valley polarization, and noncollinear spin currents in monolayer altermagnetic Ca(CoN)2
Altermagnets, recently recognized as a third class of collinear magnetic materials, have garnered increasing attention in condensed matter physics. In this study, combining first-principles calculatio...
Enhanced resistance switching ratio of Hf0.5Zr0.5O2-based film through reducing oxygen vacancy concentration
The resistance switching mechanism in HfO2-based resistive random access memory (RRAM) typically involves conductive filaments formed by oxygen vacancies. The inherent characteristics of this mechanis...
Experimental evidence of impurity-induced selective short-mean-free-path phonon scatterings in <i>β</i>-Ga2O3
Understanding the phonon–impurity interactions is essential to modulate and evaluate the lattice thermal conductivity (LTC) of materials for heat dissipation and thermoelectric conversion. The phonon–...
Boosting spectral response at band edge and charge transport in CZTSSe solar cells by periodic Mo back-contact texturing
This study utilizes magnetron sputtering combined with a metal mask attached to the Mo surface to fabricate a periodic protruding array microstructure. By optimizing the mask specifications (200-mesh...
Independent dual-band metamaterial absorber with large frequency ratio based on Helmholtz resonators
We propose a dual-band metamaterial absorber with large frequency ratio, comprising periodic laminated metal–dielectric pyramids cascaded with a Helmholtz resonator array. Specifically, the metal–diel...
Non-contact triboelectric smart eye mask for ocular motion monitoring
Traditional sleep monitoring systems are often intrusive and uncomfortable due to direct skin contact, limiting long-term usability. To overcome this, we developed a non-contact smart eye mask using t...
Essential metrics for measuring indoor photovoltaics
Indoor photovoltaics (IPVs) are emerging as sustainable power sources for low-energy electronics operating under ambient lighting. However, the absence of standardized measurement protocols and report...