Near- to far-infrared omnidirectional spectral control of thermal emission via transition metal chalcogenide polaritonics for thermophotovoltaics

Q Qixiang Wang (School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,) Z Zhequn Huang (Zhiyuan Innovative Research Center, Shanghai Jiao Tong University 2 , Shanghai 200240,) H Heng Zhang Y Yilin Feng Z Zekai Lu (School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,) J Junichiro Shiomi (Institute of Engineering Innovation, School of Engineering, The University of Tokyo) T Tao Deng (China-UK Low Carbon College) H Hongxing Xu (State Key Laboratory for Quality and Safety of Agro-Products, Institute of Plant Protection and Microbiology, Zhejiang Academy of Agricultural Sciences) K Kehang Cui (School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,)

Abstract

Omnidirectional spectral thermal emission control over broad infrared wavelengths from the near-infrared (NIR) to the long-wavelength infrared (LWIR) range and over a large angular range has been one of the most sought-after fundamental challenges. For thermophotovoltaics, out-of-band radiation by phonon polaritons in the LWIR range can cause significant efficiency loss, and the lack of omnidirectionality at large angles can cause substantial power density drop. Here, we address these two issues by proposing a materials system based on transition metal chalcogenides (TMCs) and a multi-objective optimization design guideline empowered by hierarchical sequential learning. The inherent exciton and phonon properties of MoS2 enable the modulation of spectral and directional emission across the NIR to LWIR range and large angles of emission through plasmon and phonon polaritons. We fabricate a 6-in. thermal emitter (denoted as Omni-TMC) with omnidirectional high emissivity in the in-band range, an angular-independent sharp cutoff near the band edge, and a quenched emissivity in the entire out-of-band wavelengths across the NIR to LWIR range. The projected power conversion efficiency and power density of the Omni-TMC-based thermophotovoltaic device could reach 46.5% and 4.32 W/cm2, respectively. Our work establishes a versatile materials system and a design guideline not only for thermophotovoltaic emitters but also provides promising solutions for wide-range infrared optical and energy devices.

Article Details

Volume / Issue Vol. 127, Issue 13
Published September 30, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Q

Qixiang Wang

School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,

Z

Zhequn Huang

Zhiyuan Innovative Research Center, Shanghai Jiao Tong University 2 , Shanghai 200240,

H

Heng Zhang

Y

Yilin Feng

Z

Zekai Lu

School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,

J

Junichiro Shiomi

Institute of Engineering Innovation, School of Engineering, The University of Tokyo

T

Tao Deng

China-UK Low Carbon College

H

Hongxing Xu

State Key Laboratory for Quality and Safety of Agro-Products, Institute of Plant Protection and Microbiology, Zhejiang Academy of Agricultural Sciences

K

Kehang Cui

School of Materials Science and Engineering, State Key Laboratory of Metal Matrix Composites, Center for Hydrogen Science, Shanghai Jiao Tong University 1 , Shanghai 200240,