Boosting spectral response at band edge and charge transport in CZTSSe solar cells by periodic Mo back-contact texturing

Y Yuhao Zhang L Letu Siqin (Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, School of Physical Science and Technology, Center for Quantum Physics and Technologies, Inner Mongolia University 1 , Hohhot 010021,) R Ruijian Liu (Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, School of Physical Science and Technology, Center for Quantum Physics and Technologies, Inner Mongolia University 1 , Hohhot 010021,) Y Yunjie Bai J Jingqi Qiao (Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University 1 , 235 West University Road, Hohhot, Inner Mongolia 010021,) C Chenjun Yang (Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University 1 , 235 West University Road, Hohhot, Inner Mongolia 010021,) H Hongmei Luan (Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, & School of Physical Science and Technology, Inner Mongolia University 1 , Hohhot 010021,) G Guonan Cui (School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,) Y Yanchun Yang B Bin Yao C Chengjun Zhu (School of Physical Science and Technology, Inner Mongolia University 3 , 2352 West University Road, Huhhot, Inner Mongolia 010021,)

Abstract

This study utilizes magnetron sputtering combined with a metal mask attached to the Mo surface to fabricate a periodic protruding array microstructure. By optimizing the mask specifications (200-mesh optimal) and sputtering time (100-s optimal), the Mo surface was textured. Experimental results demonstrate that this periodic microstructure effectively modulates the spatial distribution of reflected angles for incident sunlight (primarily near-infrared band edge light with deep penetration depth) reaching the Mo back contact in Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. This significantly extends the effective optical path length, thereby enhancing photon absorption utilization. Concurrently, the periodic structure improves the crystallinity of the absorber layer, optimizes carrier transport properties, and effectively suppresses the concentration of interfacial and bulk defects. Benefiting from these synergistic improvements in both electrical and optical performance, the power conversion efficiency of the CZTSSe devices increased from 11.59% to 12.82%. The entirely physical optimization scheme employed here offers high controllability and excellent compatibility with other process enhancements, presenting a straightforward and effective strategy for improving absorber crystal growth and light management in photovoltaic devices.

Article Details

Volume / Issue Vol. 127, Issue 13
Published September 30, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Y

Yuhao Zhang

L

Letu Siqin

Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, School of Physical Science and Technology, Center for Quantum Physics and Technologies, Inner Mongolia University 1 , Hohhot 010021,

R

Ruijian Liu

Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, School of Physical Science and Technology, Center for Quantum Physics and Technologies, Inner Mongolia University 1 , Hohhot 010021,

Y

Yunjie Bai

J

Jingqi Qiao

Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University 1 , 235 West University Road, Hohhot, Inner Mongolia 010021,

C

Chenjun Yang

Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, Center for Quantum Physics and Technologies, School of Physical Science and Technology, Inner Mongolia University 1 , 235 West University Road, Hohhot, Inner Mongolia 010021,

H

Hongmei Luan

Inner Mongolia Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials, & School of Physical Science and Technology, Inner Mongolia University 1 , Hohhot 010021,

G

Guonan Cui

School of Physics and Electronic Information, Inner Mongolia Autonomous Region Engineering Research Center for Rare Earth Functions and New Energy Storage Materials, Inner Mongolia Normal University 1 , 81 Zhaowuda Road, Huhhot, Inner Mongolia 010022,

Y

Yanchun Yang

B

Bin Yao

C

Chengjun Zhu

School of Physical Science and Technology, Inner Mongolia University 3 , 2352 West University Road, Huhhot, Inner Mongolia 010021,