Applied Physics Letters

Vol. 127, Issue 16 Issue 16 2025
61
Articles

Articles in this Issue

Hot phonon bottlenecks and the role of non-equilibrium acoustic phonons in III–V multi-quantum well systems

Izak Baranowski, Dragica Vasileska, Ian R. Sellers et al. Oct 20, 2025 10.1063/5.0287641

The hot phonon bottleneck effect is a promising mechanism for the realization of a true hot carrier solar cell. Prior work has assumed that the acoustic phonons created via the decay of longitudinal p...

Electrical characterization of hexagonal SiGe

I. Bollier, F. Balduini, M. Sousa et al. Oct 20, 2025 10.1063/5.0287884

We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion imp...

Electroluminescent performance and color tuning of heteroleptic Cu(I) complex via controlled doping and layer engineering

Diego Vilches, Cristian Antoine, Fabian Lara et al. Oct 20, 2025 10.1063/5.0288246

We report the electroluminescent properties of a well-known Cu(I) complex based on P∧P-type ligands—specifically bis[2-(diphenylphosphino)phenyl] ether (DPEphos)—and N∧N-type ligands, namely, 2,9-dime...

Compact multifunctional slit-type Helmholtz silencer for broadband sound attenuation with ventilation

Yukai Yu, Jiaji Chen, Nahid Tushar et al. Oct 20, 2025 10.1063/5.0294082

Achieving efficient broadband sound attenuation at low frequencies without obstructing airflow remains a major challenge in duct acoustics and ventilated noise-control systems, due to the inherent tra...

Catalytic NiO/Ni/N-doped carbon nanoreactors for suppressing polysulfide shuttle: <i>In situ</i> Raman spectroscopic validation

Huimin Sang, Ziying Shi, Jun Zhang et al. Oct 20, 2025 10.1063/5.0290830

The practical implementation of lithium-sulfur batteries remains hindered by polysulfide shuttling and sluggish redox kinetics. To address this, we synthesize NiO/Ni nanoparticles anchored on nitrogen...

Reduction of hole traps in GaN MOS structures by high-pressure oxygen annealing

Masahiro Hara, Kazuki Tomigahara, Mikito Nozaki et al. Oct 20, 2025 10.1063/5.0292841

The impact of annealing pressure on hole traps in SiO2/p-type GaN metal-oxide-semiconductor (MOS) structures was investigated. The density of fast-response interface hole traps (Nhump) was characteriz...

High-speed, self-powered, and position-sensitive photodetector based on ReS2/Si heterojunction

Longyu Lyu, Haiyan Nan, Yuan Gao et al. Oct 20, 2025 10.1063/5.0289301

A van der Waals heterostructure combining rhenium disulfide (ReS2) with silicon (Si) was constructed in this study to address challenges in photodetection applications. The ReS2/Si device demonstrated...

Experimentally establishing the optical dielectric function of 2D Janus TMDs

Blake Povilus, Renee Sailus, Jan Kopaczek et al. Oct 20, 2025 10.1063/5.0280666

Janus transition metal dichalcogenide (TMD) monolayers exhibit unique optoelectronic properties, arising from their broken mirror symmetry and out-of-plane dipole moments, which distinguish them from...

High-intensity focused ultrasound (HIFU) based longitudinal shear wave elastography for tissue ablation planning

Minho Song, Gerald Lee, Ivan Pelivanov et al. Oct 20, 2025 10.1063/5.0290224

Accurately determining the margins of prostate cancer (PCa) during planning of endorectal high-intensity focused ultrasound (HIFU) ablation under ultrasound (US) imaging guidance is challenging. Shear...

Strain-engineered tunable negative Poisson's ratio and anisotropic mechanics in tellurene

Defa Liu, Shihao He, Hongxuan Ma Oct 20, 2025 10.1063/5.0288996

Two-dimensional (2D) auxetic materials exhibiting negative Poisson's ratio (NPR) have garnered significant attention for their exceptional mechanical properties, which enable groundbreaking applicatio...

Strain tuned spin excitations in Janus Cr2I3Cl3 monolayer

Ken Chen, Shiqi Shao, Xinlong Yang et al. Oct 20, 2025 10.1063/5.0280917

The Dzyaloshinskii–Moriya interaction (DMI) plays a key role in stabilizing noncollinear spin textures. However, the nearest-neighbor DMI is usually prohibited in certain hexagonal lattice materials d...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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