Applied Physics Letters

Electrical characterization of hexagonal SiGe

I I. Bollier (IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,) F F. Balduini (IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,) M M. Sousa M M. Vettori (Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,) W W. H. J. Peeters (Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,) E E. P. A. M. Bakkers (Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,) H H. Schmid (IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,)

Abstract

We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase is recovered after implantation by solid phase recrystallization. Independent of the metal used, contacts on n-type samples resulted in Schottky barriers due to Fermi level pinning of hex-SiGe. Overall, this constitutes a first step toward use of hex-SiGe for optoelectronic applications.

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Article Details

Volume / Issue Vol. 127, Issue 16
Published October 20, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (7)

I

I. Bollier

IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,

F

F. Balduini

IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,

M

M. Sousa

M

M. Vettori

Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,

W

W. H. J. Peeters

Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,

E

E. P. A. M. Bakkers

Department of Applied Physics, Eindhoven University of Technology 2 , Eindhoven,

H

H. Schmid

IBM Research Europe—Zürich 1 , Zürich, Rueschlikon,

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