High-speed, self-powered, and position-sensitive photodetector based on ReS2/Si heterojunction

Abstract

A van der Waals heterostructure combining rhenium disulfide (ReS2) with silicon (Si) was constructed in this study to address challenges in photodetection applications. The ReS2/Si device demonstrated self-powered operation with an ultrafast response time of 66 μs rise time and 54 μs decay time, and a detectivity of 3.63 × 1011 Jones. The interfacial charge transfer mechanism and built-in electric field at the interface contributed to these enhanced properties. A position-sensitive detection application utilizing the device structure was created, demonstrating its ability to accurately detect a distance change of 2 μm. This work provides a promising pathway for developing high-speed integrated photonic devices in the post-Moore era.