Applied Physics Letters

Vol. 127, Issue 17 Issue 17 2025
57
Articles

Articles in this Issue

Investigation and modeling of subthreshold turn-on voltage in bulk and FDSOI MOSFETs at cryogenic temperatures

Zhizhao Ma, Shilong Li, Jiarui Ma et al. Oct 23, 2025 10.1063/5.0287858

Conventional physics-based MOSFET models miss the sharp subthreshold turn-on “knee” in the logarithmic dependence of the Id on the Vgs that emerges in MOSFETs at cryogenic temperatures. This oversight...

Ferroelectric tunnel junction based on ultrathin Zr0.75Hf0.25O2

Yating Cao, Haokun Li, Wei Zhang et al. Oct 23, 2025 10.1063/5.0292994

Ferroelectric tunnel junction (FTJ) based on hafnia/zirconia-based thin films has emerged as a promising class of nonvolatile memory, owing to their fast switching speeds, low power consumption, and f...

Rewritable multilevel optical storage based on valence state conversion induced by phase-shaped femtosecond laser in rare earth-doped nanocrystals

Biao Zheng, Lianzhong Deng, Hongmei Ma et al. Oct 23, 2025 10.1063/5.0292779

Optical storage based on femtosecond laser-induced valence state conversion (VC) in solid materials has garnered significant interest due to its excellent readability and high signal-to-noise ratio. P...

Interface-driven phonon scattering and carrier dynamics in asymmetric GeS/GeSe van der Waals heterostructure

Shuwei Tang, Yilong Xiao, Mengxiu Wu et al. Oct 23, 2025 10.1063/5.0290989

Two-dimensional (2D) van der Waals (vdW) heterostructures, featured by the unique inverted asymmetric architectures, open new avenues for finely tuning electronic properties at the atomic scale. The s...

Improving electrical properties of metal–semiconductor contact on Al-rich n-AlGaN by multi-step annealing

X. Q. Guo, J. Lang, F. J. Xu et al. Oct 23, 2025 10.1063/5.0285985

N-type Ohmic contact on Al-rich AlGaN has garnered special attention, thanks to its crucial impact on the performance of deep ultraviolet devices, which are experiencing a surge in demand. However, th...

Single-channel-readout amplitude-encoded superconducting single-photon detector array

Rui Yin, Hao Wang, Qi Chen et al. Oct 23, 2025 10.1063/5.0288512

Photonic integrated circuits serve as essential platforms in quantum science, particularly in quantum communication and quantum computing, where linear high-performance single-photon detector arrays a...

Solid phase epitaxy of rutile-type GeO2 on TiO2 (001)

Yo Nagashima, Shohei Osawa, Daichi Oka et al. Oct 23, 2025 10.1063/5.0271675

Rutile-type GeO2 (r-GeO2) is an ultra-wide bandgap oxide semiconductor, which attracts growing interest because of its ambipolar dopability and high carrier mobility predicted by recent first-principl...

Crystal structure, chemical bonding, and mechanical properties of EuMg2Bi2

Dongming Xiao, Jun Luo, Jiawei Zhang et al. Oct 23, 2025 10.1063/5.0290859

EuMg2Bi2, a magnetic topological semimetal, has garnered significant interest for its potential in spintronics, quantum computing, magnetoelectric devices, and thermoelectric energy conversion. Howeve...

MoRe superconducting nanowire single-photon detector atop of lithium niobate on insulator

Aleksey Nevzorov, Iliia Venediktov, Vladislav Korovin et al. Oct 23, 2025 10.1063/5.0295444

We demonstrate an amorphous molybdenum–rhenium (MoRe) film on a thin-film lithium niobate substrate as an efficient superconducting nanowire single-photon detector (SNSPD) operating at T = 2.5 K. MoRe...

Promising photovoltaic performance in ternary chalcogenides ASbS2 (A=Na, K): Atomistic insights from <i>ab initio</i> calculations

Un-Gi Jong, Il-Chol Ri, Chol-Jun Yu Oct 23, 2025 10.1063/5.0297103

Ternary chalcogenides (TCGs) are drawing significant attention as a promising light absorber for thin-film solar cells but their material properties are not yet well understood. Here, we report a stud...

Dynamic change in light-regulated hardness in SrTiO3

Nant Nammahachak, Manlika Sriondee, Tanachat Eknapakul et al. Oct 23, 2025 10.1063/5.0283875

We report our discovery of the dynamic change in light-regulated hardness in an SrTiO3 single crystal. Vickers hardness and atomic force microscope measurements reveal that the hardness is surprisingl...

Constructing multi-interface heterostructures of NiFe-LDH/CeO2/C for enhanced OER performance

Shaoyang Zhang, Lu Liu, Guoli Liu et al. Oct 23, 2025 10.1063/5.0294582

Interface engineering of transition metal layered double hydroxides (LDHs) is an effective method in the development of promising catalysts for enhancing their electrochemical activity toward the oxyg...

Polarity-dependent discharge evolution in bubbled water under repetitive pulsed fields: From bubble-mediated initiation to polarity-controlled breakdown

Qilong Zhu, Guiquan Peng, Weisheng Cui et al. Oct 23, 2025 10.1063/5.0282592

Liquid discharge under pulse voltage has been applied in many fields, but mechanisms governing repetitive-pulse breakdown in bubble-containing media remain incompletely understood. This study investig...

Direct observation of the strong thermal non-equilibrium between optical and acoustic phonons in monolayered 2D materials

Yu Hua, Suman Jaiswal, Masoud Mahjouri-Samani et al. Oct 23, 2025 10.1063/5.0299944

Quantifying thermal non-equilibrium between different phonon branches in supported monolayered two-dimensional materials remains a significant challenge due to complex substrate interactions and optic...

Investigation of the γ-irradiation-induced degradation mechanism of p-channel p-GaN/u-GaN/AlGaN MESFETs

Yu Du, Huake Su, Tao Zhang et al. Oct 23, 2025 10.1063/5.0283348

In this letter, a Schottky-gated p-GaN/u-GaN/AlGaN p-channel metal–semiconductor field-effect transistor on a SiC substrate with high irradiation tolerance is demonstrated, and the irradiation-induced...

Band offset between cubic boron nitride and nitrogen-plasma terminated boron-doped diamond (111)

Ali Ebadi Yekta, Martha R. McCartney, David J. Smith et al. Oct 23, 2025 10.1063/5.0278816

Diamond electronics has attracted attention for high power and high frequency device applications. Cubic boron nitride (c-BN) may be considered as a suitable dielectric layer for electron channel diam...

Thermal boundary conductance under large temperature discontinuities of ultrathin Pb(111) films on Si(111)

Christian Brand, Tobias Witte, Mohammad Tajik et al. Oct 23, 2025 10.1063/5.0291617

Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with improved perfor...

Strain-tuned magnetic resonance in in-plane magnetized synthetic antiferromagnets

Haoxiang Xu, Sai Zhou, Milad Jalali et al. Oct 23, 2025 10.1063/5.0274552

We investigate the effect of strain on the magnetic resonance characteristics of in-plane magnetized synthetic antiferromagnets (SAFs) through micromagnetic simulations and theoretical modeling. By ap...

Dual-MZI sensitivity-enhanced U-shaped microfiber Vernier probe for inflammatory biomarker SAA detection

Xinghong Chen, Xuejin Li, Jinghan Zhang et al. Oct 23, 2025 10.1063/5.0288852

A sensitivity-enhanced dual Mach–Zehnder interferometer (MZI) fiber-optic biosensing platform for highly sensitive immunoassay detection of the inflammatory biomarker serum amyloid A (SAA) is presente...

Superconducting nanowire single photon detectors based on NbRe nitride ultrathin films

F. Avitabile, F. Colangelo, M. Yu. Mikhailov et al. Oct 23, 2025 10.1063/5.0282478

The influence of the reactive DC sputtering parameters on the superconducting properties of NbReN ultrathin films was investigated. A detailed study of the current–voltage characteristics of the plasm...

Manipulating skyrmionic polar nanodomains and creating designable conducting channels in ferroelectric thin films

Hongying Chen, Shengkai Liu, Zhanbo Yu et al. Oct 23, 2025 10.1063/5.0300487

Polar skyrmion nanodomains in ferroelectric materials, analogous to those in ferromagnetic systems, have attracted significant attention because of the polar states and their potential application in...

Colloidal nanocrystal assembly enables composition and doping engineering for high-performance PbS-based thermoelectrics

Benteng Wu, Mochen Jia, Hongzhang Song et al. Oct 23, 2025 10.1063/5.0298894

Lead sulfide (PbS) is a promising thermoelectric material due to its low cost, excellent thermal stability, and abundance of constituent elements. As a narrow-bandgap semiconductor, PbS possesses high...

Micro-transfer printing of antimonide III–V photovoltaics

Margaret A. Stevens, Alex J. Grede, Shawn Mack et al. Oct 23, 2025 10.1063/5.0296712

We demonstrate micro-transfer printing of AlGaAsSb membranes and GaSb-based photovoltaic devices using a lattice-matched design and a citric-acid-based chemistry. Using near-IR microscopy, we quantify...

The more, the better: Al1− <i>x</i> (Mg,Hf)xN wurtzite ferroelectrics through co-alloying

Victoria M. Bradford, Thi Nguyen, Geoff L. Brennecka et al. Oct 23, 2025 10.1063/5.0289994

Wurtzite ferroelectrics (FEs) are promising candidates for next-generation memory and computing devices due to their compatibility with semiconductor processing. However, their adoption is limited by...

Defect engineering via BiMnO3 doping in AgNbO3: Achieving high energy storage density under moderate electric fields

G. L. Song, Q. X. Pan, X. M. Zhang et al. Oct 23, 2025 10.1063/5.0298160

In this work, relaxor antiferroelectric (1−x) AgNbO3−xBiMnO3 ceramics were synthesized by solid-state processing. The analysis of electron paramagnetic resonance and x-ray photoelectron spectroscopy c...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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