Applied Physics Letters

Vol. 127, Issue 19 Issue 19 2025
56
Articles

Articles in this Issue

Optimal generation of soft x-ray high harmonics through free adjustment of laser parameters: A comparison of three commonly used atoms

Chi Zhang, Xiangyu Tang, Zhiming Yin et al. Nov 10, 2025 10.1063/5.0305263

Tabletop soft x-ray (SXR) high harmonics, produced through the interaction of ultrashort mid-infrared lasers with rare gas atoms, offer significant potential for diverse scientific applications. Howev...

A dual-detector x-ray <i>μ</i> -CT system for simultaneous spectral and phase contrast imaging

P. Perion, L. Brombal, P. Cardarelli et al. Nov 10, 2025 10.1063/5.0302613

X-ray phase contrast imaging (XPCI) and x-ray spectral imaging (XSI) are being increasingly used in advanced biomedical imaging applications, as they offer significant advantages for structural and co...

Flexible orbital torque device with ultralow switching current

Liguang Gong, Jian Song, Bin Lao et al. Nov 10, 2025 10.1063/5.0299096

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we d...

Watt-level widely tunable near-infrared all-fiber femtosecond laser

Pu Sun, Ke Feng, Sailing He Nov 10, 2025 10.1063/5.0292734

Due to the low scattering and absorption in tissues, the femtosecond laser at 1600–1880 nm (NIR-IIb-c) has aroused great interest for biomedical multiphoton microscopy. Here, we present a compact all-...

High and magnetic-field-dependent surface carriers mobility in 3D topological insulators without bulk states

M. V. Pugachev, A. E. Borisov, A. V. Shupletsov et al. Nov 10, 2025 10.1063/5.0297373

By applying the conventional two-liquid model to the magnetoresistivity tensor, we reveal a record-high carrier mobility for surface states in tetradymite topological insulators (TIs) ∼20 000 cm2/V s...

Enhanced photodetection performance enabled by an out-of-plane built-in electric field

Yujue Yang, Xueting Liu, Chunyang Yao et al. Nov 10, 2025 10.1063/5.0296974

The photodetectors with low dark current, high sensitivity, and fast speed are of great importance to meet the requirement of high-speed and real-time visual perception scenarios. However, it still re...

Perspective on nanoheat generation and dissipation in semiconductor devices

Zhenghua An Nov 10, 2025 10.1063/5.0293553

In advanced microelectronics, heat originates within nanoscale transistor channels, where field-driven electrons accelerate and scatter before equilibrating with the lattice—forming highly localized h...

Device physics of indoor photovoltaics: A fundamental investigation

Zhouqing Wei, Xin Wen, Wenbo Lu et al. Nov 10, 2025 10.1063/5.0283842

Indoor photovoltaics (IPVs) have recently attracted considerable attention due to their ability to harvest indoor light to power Internet of Things (IoT) devices. However, in contrast to the well-esta...

Pulsed laser attack at 1061 nm potentially compromises quantum key distribution

Anastasiya Ponosova, Irina Zhluktova, Daria Ruzhitskaya et al. Nov 10, 2025 10.1063/5.0287448

Quantum key distribution systems offer cryptographic security, provided that all their components are thoroughly characterized. However, certain components might be vulnerable to laser-damage attacks,...

Cancer metastasis: How blood flow affects platelet–cancer cell interactions

Ziwei Zhu, Ting Ye, Zehong Xia et al. Nov 10, 2025 10.1063/5.0282634

The interactions between platelets and cancer cells play a crucial role in cancer metastasis, particularly within the dynamic environment of blood circulation, where the high abundance of blood cells...

Mechanistic insights into nonthermal ablation of copper nanoparticles under femtosecond laser irradiation

Janghan Park, Freshteh Sotoudeh, Yaguo Wang Nov 10, 2025 10.1063/5.0292460

Femtosecond (fs) laser sintering enables ultrafast and spatially localized energy deposition, making it attractive for additive manufacturing of metal nanoparticles. However, undesired ablation during...

Color-tunable top-emitting OLEDs via pixelated dual-microcavity design

Long Chen, Yanlong Wen, Mengxin Xu et al. Nov 10, 2025 10.1063/5.0301863

This study introduces a color-tunable organic light-emitting diode architecture based on a pixelated dual-microcavity design, fabricated using a single-layer mask technique. The device is engineered b...

Thermal droop investigations on ultraviolet C-band light-emitting diodes

Jianping Zhang, Ying Gao, Ling Zhou et al. Nov 10, 2025 10.1063/5.0296889

We report on an exceptional thermal droop of 3.3% for a 272 nm ultraviolet C-band (UVC) light-emitting diode (LED) at 300 mA (39.4 A/cm2) and 102 °C junction temperature. To understand the superior th...

Orbital inversion mechanisms hidden in strongly correlated radical systems

Jiarui Zeng, Chang-Chun He, Shao-Bin Qiu et al. Nov 10, 2025 10.1063/5.0292313

Orbital inversion in organic radical systems is of interest in multiple domains such as spintronics, luminescence, and chemical reactions but requires to comprehend its mechanisms. Here, we reveal an...

THz electrodynamics and superconducting energy scales of ZrN thin films

Ozan Saritas, Frederik Bolle, Yayi Lin et al. Nov 10, 2025 10.1063/5.0299019

The terahertz properties of ZrN thin films grown with CMOS techniques on industry-standard 300 mm silicon wafers are investigated in order to explore their superconducting behavior. The films have thi...

Ultrafast carrier dynamics in GeSn/GeSi quantum wells with inter-subband resonances

Anran Wang, Dingqi Zheng, Li Gao et al. Nov 10, 2025 10.1063/5.0297302

Group IV material systems represented by GeSn alloys have come forth as a promising candidate for next-generation silicon-based photonic integrated circuits, thanks to their favorable properties, incl...

Dynamic phase reconstruction enabled by an integrated operational metasurface

Huan Chen, Qiang Yang, Shizhen Chen et al. Nov 10, 2025 10.1063/5.0302612

The acquisition and reconstruction of phase information has become a major research focus in optical imaging, especially in fields such as optical metrology and label-free microscopic imaging. Existin...

Unraveling the four-phonon scattering mechanism in the exceptional thermal conductivity of TTH-carbon

Pin-Zhen Jia, Li-Qin Deng, Xiao-Gen Deng et al. Nov 10, 2025 10.1063/5.0302731

TTH-carbon, a novel two-dimensional all-sp3 carbon allotrope, exhibits excellent stability and high carrier mobility, promising for nanoelectronic applications. To assess its device reliability, we sy...

Low p-contact resistance InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates

Hsin-Wei S. Huang, Shivali Agrawal, Debaditya Bhattacharya et al. Nov 10, 2025 10.1063/5.0297626

Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. In this study, the co...

Transient photoinduced cubic-like phase transition in orthorhombic SnSe

Kaiwen Sun, Xiangqi Liu, Shijie Ma et al. Nov 10, 2025 10.1063/5.0297774

SnSe, a low-symmetry layered semiconductor, features weak-interatomic bonding, pronounced anharmonicity, and other characteristics that make it highly attractive for thermoelectric applications. Recen...

Hexagonal InOI monolayer: A 2D phase-change material combining topological insulator states and piezoelectricity

Wenhui Wan, Xinyue Liu, Yanfeng Ge et al. Nov 10, 2025 10.1063/5.0296867

Two-dimensional (2D) phase-change materials (PCMs) with moderate transition barriers and distinctly contrasting properties are highly desirable for multifunctional devices, yet such systems remain sca...

Advancing self-assembled molecules toward interface-optimized p–i–n-type perovskite photodetectors

Jiarui Zhang, Rui Gao, Chi Ma et al. Nov 10, 2025 10.1063/5.0289666

Perovskite photodetectors have garnered considerable attention owing to their exceptional optoelectronic properties and their promising potential for flexible, high-performance device applications. Ho...

Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics

Kaiyu Wang, Mengdi Li, Sheng Zhang et al. Nov 10, 2025 10.1063/5.0288670

In this work, a “turn-around” behavior in the threshold voltage (VTH) shift of GaN metal–insulator–semiconductor (MIS) high electron mobility transistors on Si substrate under positive gate bias stres...

On the thickness-driven metal–insulator transitions of buried LaNiO3 films

Yujie Zhou, Xiaoyu Qiu, Jie Tu et al. Nov 10, 2025 10.1063/5.0289069

Metal–insulator transitions (MITs) usually occur in metallic oxide films when scaling down the thickness below a critical value. It is difficult to pinpoint the intrinsic driving mechanism underlying...

Low-temperature electrical transport properties of CoP3

Peng Li, Binbin Jiang, Jiaqing He Nov 10, 2025 10.1063/5.0297047

Topological materials have gained significant attention due to their unique electronic properties, making them promising candidates for future electronics and quantum devices. Two single-crystalline C...

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Journal Info

Publisher American Institute of Physics
ISSN 0003-6951
E-ISSN 1077-3118
Subject Physical Sciences
Language English
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