Low-temperature electrical transport properties of CoP3

Abstract

Topological materials have gained significant attention due to their unique electronic properties, making them promising candidates for future electronics and quantum devices. Two single-crystalline CoP3 samples were synthesized by chemical vapor transport with different process steps and characterized in this study. At low temperatures, both samples demonstrated giant magnetoresistance, Shubnikov–de Haas oscillations, negative magnetoresistance (NMR), and weak antilocalization (WAL), with sample 2 also showing Zeeman splitting. The difference between the two samples mainly arises from the varying hole concentrations caused by different P vacancies, which result in the Fermi level of sample 2 being closer to the quadratic contact point of the band structure. The observation of giant magnetoresistance, Shubnikov–de Haas oscillations, negative magnetoresistance, and weak antilocalization provides experimental evidence for CoP3 as a potential topological material. This work provides valuable insights into the fundamental transport mechanisms at low temperatures, suggesting that CoP3 could hold potential for applications in spintronic devices and quantum computing.