Transient photoinduced cubic-like phase transition in orthorhombic SnSe

K Kaiwen Sun X Xiangqi Liu (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) S Shijie Ma P Peng Suo (Department of Physics, Shanghai University 1 , Shanghai 200444,) C Chen Wang X Xian Lin Y Yanfeng Guo (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) G Guohong Ma (Department of Physics, Shanghai University 1 , Shanghai 200444,)

Abstract

SnSe, a low-symmetry layered semiconductor, features weak-interatomic bonding, pronounced anharmonicity, and other characteristics that make it highly attractive for thermoelectric applications. Recent studies have demonstrated that SnSe undergoes a non-thermal phase transition from the Pnma phase to a non-equilibrium Immm phase when exposed to ultrafast laser irradiation at room temperature [Sundaram, et al. Nat. Mater. 1, 217 (2002)]. Here, we employ polarization-resolved ultrafast two-color pump–probe reflectivity spectroscopy to investigate the anisotropic hot carrier dynamics in the photoinduced Immm phase SnSe. We demonstrate that a coherent acoustic phonon mode at ∼46 GHz provides additional confirmation of the photoinduced phase transition. Concurrently, the incoherent dynamics reveal two polarization-dependent exponential decay components. Based on the two-temperature model, we extract the electron–phonon coupling strength to be 7.3 × 1014 W m−3 K−1 along the armchair axis and 8.7 × 1014 W m−3 K−1 along the zigzag axis—weak anisotropy of the in-plane carrier–phonon interactions in the photoinduced Immm phase SnSe. These findings unveil a non-equilibrium lattice structure with direction-dependent electron–phonon coupling, offering valuable insights into the excited-state behavior and ultrafast phase transition mechanisms in the low-symmetry materials.

Article Details

Volume / Issue Vol. 127, Issue 19
Published November 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

K

Kaiwen Sun

X

Xiangqi Liu

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

S

Shijie Ma

P

Peng Suo

Department of Physics, Shanghai University 1 , Shanghai 200444,

C

Chen Wang

X

Xian Lin

Y

Yanfeng Guo

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

G

Guohong Ma

Department of Physics, Shanghai University 1 , Shanghai 200444,